Recombination centres for excess carriers containing from four to seven oxygen atoms (besides the known ones containing eight oxygen atoms) are effectively formed in 450 to 600 °C heat‐treated oxygen‐rich n‐type silicon. An analysis of the formation kinetics of the species found in dependence on the oxygen content permits to find the solubility of the recombination‐efficient oxygen‐containing centres and the rates of their formation and dissociation. Some unknown nuclei in the starting material (they govern the reaction constants for the appearance and annihilation of the species studied) are responsible for the dominant formation of one (or another) kind of the oxygen‐containing recombination centres observed.
Long-lifetime photoconductivity is observed in Czochralski-grown oxygen-rich heattreated n-and p-type silicon crystals. It appears due to a slow electron (in Cz n-Si) and hole (in Cz p-Si) recombination via two kinds of oxygen-induced recombination centres. Dependences of the long-lifetime photoconductivity on the oxygen content, excitation intensity and temperature arc presented. Possible models to explain an appearance of the long-lifetime photoconductivity in Cz n-and p-Si are discussed. The data presented are important for understanding the long-time photoeffects in semiconductors and for elucidating the origin and structure of oxygen-induced recombination centres in silicon.
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