Localized Si–Au eutectic bonding around sunken pad for fabrication of a capacitive absolute pressure sensor

Liu, Qimin; Du, Lidong; Zhao, Zhan; Xiao, Li; Sun, Xiangyi

doi:10.1016/j.sna.2013.07.013

Cited by 22 publications

(12 citation statements)

References 36 publications

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“…At first, a thin layer of titanium nitride (10 nm) and gold (40 nm) was sputtered on two borosilicate glass wafers. The entire height of the phaseguides is only 50 nm which does not hamper good anodic bonding on the silicon wafer (Liu et al 2013). The TiN layer is required to achieve good adhesion of gold without any diffusion processes.…”

Section: Methodsmentioning

confidence: 99%

Symmetric surficial phaseguides: a passive technology to generate wall-less channels by two-dimensional guiding elements

Bunge

Driesche

Vellekoop

2016

Microfluid Nanofluid

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Section: Methodsmentioning

confidence: 99%

Symmetric surficial phaseguides: a passive technology to generate wall-less channels by two-dimensional guiding elements

Bunge

Driesche

Vellekoop

2016

Microfluid Nanofluid

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“…For example, for jet engines used in fighter aircraft, the temperature is usually within the range of 800–1450 °C [ 4 ], and in volcanic research, lava usually exhibits a non-Newtonian flow state between 800 and 1120 °C [ 5 , 6 ]. Traditional pressure sensors are based on silicon or silicon-on-insulator technology, and cannot operate above 450 °C [ 7 , 8 , 9 ]. Pressure sensors based on SiC for application in harsh environments have been extensively developed, and a 4H–SiC piezoresistive pressure sensor has been reported which can operate up to 800 °C [ 10 , 11 , 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

A Ceramic Diffusion Bonding Method for Passive LC High-Temperature Pressure Sensor

Sun

Xue

et al. 2018

Sensors

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Alumina ceramic is a highly promising material for fabricating high-temperature pressure sensors. In this paper, a direct bonding method for fabricating a sensitive cavity with alumina ceramic is presented. Alumina ceramic substrates were bonded together to form a sensitive cavity for high-temperature pressure environments. The device can sense pressure parameters at high temperatures. To verify the sensitivity performance of the fabrication method in high-temperature environments, an inductor and capacitor were integrated on the ceramic substrate with the fabricated sensitive cavity to form a wireless passive LC pressure sensor with thick-film integrated technology. Finally, the fabricated sensor was tested using a system test platform. The experimental results show that the sensor can realize pressure measurements above 900 °C, confirming that the fabricated sensitive cavity has excellent sealing properties. Therefore, the direct bonding method can potentially be used for developing all-ceramic high-temperature pressure sensors for application in harsh environments.

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“…This method provided a convenient method using an IR microscope to evaluate bonding quality without destroying the bonded pairs. Furthermore, the method for improving the reliability of Au/Si eutectic bonding with either an Mo-buffered layer [ 10 ] or localized bonding [ 11 ] was also studied. However, there have been few reports about the influence of contact force and the heating/cooling rate on Au/Si eutectic bonding quality.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers

Shang

Yin

et al. 2017

Micromachines

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Au/Si eutectic bonding is considered to BE a promising technology for creating 3D structures and hermetic packaging in micro-electro-mechanical system (MEMS) devices. However, it suffers from the problems of a non-uniform bonding interface and complex processes for the interconnection of metal wires. This paper presents a novel Au/Si eutectic wafer bonding structure and an implementation method for MEMS accelerometer packaging. The related processing parameters influencing the Au/Si eutectic bonding quality were widely investigated. It was found that a high temperature of 400 °C with a low heating/cooling rate of 5 °C/min is crucial for successful Au/Si eutectic bonding. High contact force is beneficial for bonding uniformity, but the bonding strength and bonding yield decrease when the contact force increases from 3000 to 5000 N due to the metal squeezing out of the interface. The application of TiW as an adhesion layer on a glass substrate, compared with a commonly used Cr or Ti layer, significantly improves the bonding quality. The bonding strength is higher than 50 MPa, and the bonding yield is above 90% for the presented Au/Si eutectic bonding. Furthermore, the wafer-level vacuum packaging of the MEMS accelerometer was achieved based on Au/Si eutectic bonding and anodic bonding with one process. Testing results show a nonlinearity of 0.91% and a sensitivity of 1.06 V/g for the MEMS accelerometer. This Au/Si eutectic bonding process can be applied to the development of reliable, low-temperature, low-cost fabrication and hermetic packaging for MEMS devices.

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Localized Si–Au eutectic bonding around sunken pad for fabrication of a capacitive absolute pressure sensor

Cited by 22 publications

References 36 publications

Symmetric surficial phaseguides: a passive technology to generate wall-less channels by two-dimensional guiding elements

Symmetric surficial phaseguides: a passive technology to generate wall-less channels by two-dimensional guiding elements

A Ceramic Diffusion Bonding Method for Passive LC High-Temperature Pressure Sensor

Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers

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