Localized doping using silicon ink technology for high efficiency solar cells

Alberi, Kirstin; Scardera, Giuseppe; Moutinho, H. R.; Reedy, R. C.; Romero, M. J.; Rogojina, E.; Kelman, Maxim B.; Poplavskyy, Dmitry; Young, David L.; Lemmi, F.; Antoniadis, Homer

doi:10.1109/pvsc.2010.5614442

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…A portfolio of simple to implement technologies, the Innovalight Cougar TN Platform involves printing a Silicon Ink pattern on the front-side of the wafer followed by a single diffusion process, which results in heavy n-type doping in the printed regions and a lightly doped n-type emitter in the regions between the ink fin gers. The use of Innovalight Silicon Ink enables controlled localized doping of selective emitter structures with abrupt 978-1-4244-5892-9/10/$26.00 ©201 0 IEEE lateral dopant profiles at ink-printed boundaries [7]. Sub sequently, the front metal grid pattern is aligned to the optically visible ink printed pattern and printed on top of an antireflection coating (see [4,6] for details).…”

Section: The Innovalight Cougarmentioning

confidence: 99%

Silicon ink selective emitter process: Optimization of selectively diffused regions for short wavelength response

Poplavskyy

Scardera

Abbott

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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The Innovalight Cougar TN Platform is a portfolio of simple to implement technologies that, when combined with Inno valight Silicon Ink, enables the manufacture of a selective emitter solar cell with a non-masking single-step diffusion. Cell efficiencies of up to 19% have been achieved. Innova light Silicon Ink is a highly engineered silicon nanoparticle colloidal dispersion, implemented for both high volume ink jet and screen deposition, and further optimized to be pro duced and delivered in commercial volumes.A particular feature of the selective emitter structure is its enhanced quantum efficiency in the short wavelength re gion as result of reduced emitter recombination. In this report we demonstrate how the properties of the selective ly doped regions on the front surface of the cell affect the short wavelength response of a Cougar cell. In particular, the importance of the emitter dopant profile for minimizing emitter recombination and the broad processing window of the Cougar cell structure with respect to emitter doping are illustrated. Further, the effect of the ink finger width on the short-wavelength response of the cell and the trade-off between the loss of short circuit current (Jsc) and metal-to ink pattern alignment are demonstrated.

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Section: The Innovalight Cougarmentioning

confidence: 99%

Silicon ink selective emitter process: Optimization of selectively diffused regions for short wavelength response

Poplavskyy

Scardera

Abbott

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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“…[ 23–33 ] However, reports of SEMDCI imaging of phosphorus emitters are less common, including homogeneous diffused emitters, [ 34–36 ] and localized selective emitters. [ 20,37 ] A more recent PV application of SEMDCI imaging has been characterizing nanotextured BSi. Metal‐catalyst chemical etching (MCCE) and reactive ion etching (RIE) are two major BSi fabrication methods [ 38,39 ] studied for PV applications.…”

Section: Introductionmentioning

confidence: 99%

Scanning Electron Microscopy Dopant Contrast Imaging of Phosphorus‐Diffused Silicon

Zhang

Scardera

Wang

et al. 2022

Adv Materials Technologies

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Phosphorous dopant diffusion profiles feature in many silicon semiconductor devices, including the vast majority of silicon solar cells. Accurate spatially resolved dopant profiling is crucial for understanding the performance of these diffused regions, however, it is very challenging to obtain such profiles in non‐planar samples. Scanning electron microscopy for dopant contrast imaging (SEMDCI), where the secondary electron (SE) image contrast is used to determine the dopant level of a semiconductor sample, is an ideal candidate for Si dopant profiling, especially for silicon samples with surface nanotexturing or black silicon (BSi) technology. However, in previous SEMDCI studies, the dopant concentration of heavily doped n‐type layers in silicon samples have shown a poor correlation with the SE signal contrast. In this work, 1) good contrast for n‐type diffused silicon without contrast‐enhancing techniques; 2) a new contrast definition to account for imaging non‐uniformities; 3) clear correlations between SE contrast and sample work function for phosphorus‐diffused planar silicon specimens across a wide range of emitter profiles; 4) implementation of an empirical baseline correction to normalize scanning electron microscopy image condition variations, are presented. This SEMDCI method is subsequently used for the first time to obtain 2D electron concentration maps for both planar and BSi samples.

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Benefit of Selective Emitters for p-Type Silicon Solar Cells With Passivated Surfaces

Jäger

Mack

Wufka

et al. 2013

IEEE J. Photovoltaics

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Localized doping using silicon ink technology for high efficiency solar cells

Cited by 9 publications

References 7 publications

Silicon ink selective emitter process: Optimization of selectively diffused regions for short wavelength response

Silicon ink selective emitter process: Optimization of selectively diffused regions for short wavelength response

Scanning Electron Microscopy Dopant Contrast Imaging of Phosphorus‐Diffused Silicon

Benefit of Selective Emitters for p-Type Silicon Solar Cells With Passivated Surfaces

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