Benefit of Selective Emitters for p-Type Silicon Solar Cells With Passivated Surfaces

Jäger, Ulrich; Mack, Sebastian; Wufka, C.; Aßmus, W.; Biro, Daniel; Preu, R.

doi:10.1109/jphotov.2012.2230685

Cited by 23 publications

(12 citation statements)

References 20 publications

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“…The FF increases only slightly, as an increase in series resistance is overcompensated by an increase of the pFF and FF 0 (more details in Section 4.2). The impact of the selective emitter is similar to the one reported in an earlier publication . Finally, the simulation predicts an energy conversion efficiency of 22.0% by applying the selective emitter and the double‐layer ARC simultaneously.…”

Section: Simulationssupporting

confidence: 79%

Analysis of the losses of industrial‐type PERC solar cells

Saint‐Cast

Werner

Greulich

et al. 2016

Physica Status Solidi (a)

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The loss analysis of state-of-the-art p-type Czochralski-grown silicon passivated emitter and rear solar cells (PERC) fabricated in a manner close to industrial production is presented in this paper. The 6-inch solar cells are featuring a homogeneous emitter on the front side, an Al2O3 passivation layer and local contacts on the rear side. The peak energy conversion efficiencies obtained are 21.1% for a standard antireflection coating (ARC) and 21.4% for a double-layer ARC. The loss analysis is based on an extended characterization of the solar cells and of special samples, which allow the separation of the contributions of each region of the solar cell including metallization. Their impact is determined experimentally on the open-circuit voltage, the short-circuit current density, and the fill factor. Based on the measurements, the devices are numerically simulated. The free energy losses are analyzed using the simulation model. Based on the results from the loss analysis, it is found that the integration of a selective emitter structure and the further improvement of the rear surface would allow for efficiencies above 22% in the short term

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Section: Simulationssupporting

confidence: 79%

Analysis of the losses of industrial‐type PERC solar cells

Saint‐Cast

Werner

Greulich

et al. 2016

Physica Status Solidi (a)

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“…was determined by fitting a line through 0%, 4%, and 20% coverage (green and blue triangles) and extrapolating to full coverage [8], [24]. This value determined from the fit is with 195 ± 3 fA/cm 2 for the "LD-bare" group significantly smaller than the 233 ± 5 fA/cm 2 measured at full coverage.…”

Section: A Emitter Saturation Current Densitiesmentioning

confidence: 94%

“…Both ablation mechanisms rely on melting the underlying Si, which is followed by rapid recrystallization. Due to recrystallization velocities in the order of m/s, proper choice of processing parameters can only minimize the laser-induced crystal damage, but cannot prevent it entirely [1], [4], [5], [8], [9]. Laser processes with long pulses are also suitable for laser-induced selective doping [10]- [12].…”

Section: Introductionmentioning

confidence: 99%

Passivation-Induced Cavity Defects in Laser-Doped Selective Emitter Si Solar Cells—Formation Model and Recombination Analysis

Geisler

Kluska

Hopman

et al. 2015

IEEE J. Photovoltaics

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Laser-induced selective Si doping and simultaneous ablation of a dielectric passivation layer is a promising technology for the creation of efficient and cost-effective solar cells. In this paper, the electrical quality of emitters produced with a 532-nm continuous-wave laser will be discussed using elaborate analysis of quasi-steady-state photoconductance (QSSPC) measurements. It will be shown that these emitters cause good charge carrier shielding, which leads to emitter saturation current densities as low as 240 fA/cm 2 for unpassivated surfaces. If an SiN x layer is present during laser doping, the emitter recombination increases by a factor of three. This detrimental effect is put down to the formation of microcavities within the recrystallized Si. A model of the ablation mechanism and cavity formation for long laser pulses is proposed, with the experimental data in this study serving as a limiting case for long irradiation lengths.

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“…Laser doping from a doped layer present on the silicon surface is an obvious technique for realization of selective emitter structures . This approach is meanwhile state‐of‐the‐art for forming selective phosphorus‐doped emitters in p‐type silicon solar cells . However, laser doping applied to boron emitters, i.e., the local laser doping from the borosilicate glass (BSG) grown on the silicon surface during boron tribromide (BBr 3 ) diffusion, has not been widely investigated to date.…”

Section: Overview Of the Settings Used For Laser Doping From The Glasmentioning

confidence: 99%

Advanced BBr₃ Diffusion With Second Deposition Step for Selective Emitter Formation by Laser Doping

Lohmüller

2018

Physica Rapid Research Ltrs

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The concept of attaching a second deposition step at the end of boron tribromide (BBr3) diffusion is introduced, where second deposition describes an active nitrogen flow through the BBr3 bubbler. This approach provides a higher boron dose in the borosilicate glass (BSG) which facilitates the formation of laser‐doped selective emitters. It is found that the second deposition hardly impacts the as‐diffused charge carrier concentration profile in comparison to BBr3 diffusion without second deposition. The emitter sheet resistance Rsh ≈ 110 Ω sq−1 and emitter dark saturation current density j0e ≈ 25 fA cm−2 (alkaline textured, Al2O3/SiNX passivation) are similar for both processes. The BBr3 diffusion process forms a BSG/silicon dioxide (SiO2) stack layer on the silicon. The BBr3 diffusion with second deposition step results in an 8 nm thicker BSG/SiO2 stack layer (total thickness: 42 nm) with factor two higher boron dose compared to the BBr3 diffusion without second deposition. After laser doping, the charge carrier concentration is higher for the BBr3 process with second deposition resulting in stronger local doping with about 10 Ω sq−1 lower Rsh. For laser‐doped and Al2O3/SiNX‐passivated areas, a promising process combination results in j0e = (250 ± 30) fA cm−2 at Rsh = (65 ± 1) Ω sq−1.

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Benefit of Selective Emitters for p-Type Silicon Solar Cells With Passivated Surfaces

Cited by 23 publications

References 20 publications

Analysis of the losses of industrial‐type PERC solar cells

Analysis of the losses of industrial‐type PERC solar cells

Passivation-Induced Cavity Defects in Laser-Doped Selective Emitter Si Solar Cells—Formation Model and Recombination Analysis

Advanced BBr₃ Diffusion With Second Deposition Step for Selective Emitter Formation by Laser Doping

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Benefit of Selective Emitters for p-Type Silicon Solar Cells With Passivated Surfaces

Cited by 23 publications

References 20 publications

Analysis of the losses of industrial‐type PERC solar cells

Analysis of the losses of industrial‐type PERC solar cells

Passivation-Induced Cavity Defects in Laser-Doped Selective Emitter Si Solar Cells—Formation Model and Recombination Analysis

Advanced BBr3 Diffusion With Second Deposition Step for Selective Emitter Formation by Laser Doping

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Product

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Advanced BBr₃ Diffusion With Second Deposition Step for Selective Emitter Formation by Laser Doping