Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations

Gong, Jing; Chan, P.C.H.

doi:10.1016/j.sse.2007.08.010

Cited by 7 publications

(6 citation statements)

References 12 publications

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“…Finally, as a first conclusion we can observe that the relative mobility and conductivity in the asymmetrical mode has better linearity than the relative mobility and conductivity in the symmetrical mode. The same remark was noted for transconductance in previous experimental work in a conventional MIGFET [11]. Also, we can conclude that the transport properties in both modes are almost doubled when the potentials V c1 and V c2 are maximum.…”

Section: Casesupporting

confidence: 90%

“…The transconductance observed in this system is almost stable in asymmetrical mode as the experimental work in conventional MIGFET [11]. This feature is highly desirable in electronics to reduce the noise in amplifications and improve the stability [18].…”

Section: Introductionmentioning

confidence: 51%

“…The solid curve presents the result achieved using the expression (11), and the dashed curve presents the result using the expression follow (19). The solid curve can be divided into three regions: the first in 50-250 meV, the second in 250-550 meV, and the third in 550-650 meV.…”

Section: Casementioning

confidence: 99%

“…Double gate Silicon On Insulator (SOI) devices have been also widely researched to replace the current planar SOI devices [8,11,12]. The main advantage of this architecture is that it offers a reinforced electrostatic coupling between the conduction channel and the gate electrode.…”

Section: Introductionmentioning

confidence: 99%

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Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

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Abstract-The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze transport in this device. We find the relative mobility as a linear and increasing function in different modes; also, we find transconductance as an almost flat function in all the evaluated interval. Finally, we analyze the differential capacitance and resistivity, and we report regions where this device is operating in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of this device in symmetrical mode.

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Section: Casesupporting

confidence: 90%

Section: Introductionmentioning

confidence: 51%

Section: Casementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

View full text Add to dashboard Cite

show abstract

“…The evaluation of harmonic distortion in electron devices is an important topic both in device [1][2][3][4] and circuit design [5]. Consequently, the measurement, characterization and study of distortion in MOSFET devices are relevant tasks in order to achieve optimal design.…”

Section: Introductionmentioning

confidence: 99%