Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Abstract

Abstract-The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze transport in this device. We find the relative mobility as a linear and increasing function in different modes; also, we find transconductance as an almost flat function in all the evaluated interval. Finally, we analyze the differential capacitance and resistivity, and we report regions where this device is operating in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of this device in symmetrical mode.

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

“…Figure 5 b shows the 2-DEG mobility ( μ ) versus 2-DEG density for all devices. The 2-DEG mobility of all devices initially increases along with the increasing of 2-DEG density, primarily attributed to the enhancement of the screening effect against the ionized ion scattering [ 25 - 27 ]. Yet, the mobility degrading with the further increase of 2-DEG density is considered to be the result of electrons spilling into the AlGaN barrier layer [ 28 - 30 ].…”

“…Both α n and α p are strongly dependent on the electric field applied on the device and can be expressed as [25]…”

“…where α n and α p are the electron and hole ionization rate defined as the number of electron-hole pairs generated by an electron per unit distance traveled, and J n and J p are the current density for electrons and holes, respectively. Both α n and α p are strongly dependent on the electric field applied on the device and can be expressed as [ 25 ]…”

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

“…The transport properties of ALD-FET will be studied in two different ways. The first one requires calculations of the electronic structure, as was done in a previous study on δ-FET, ALD-FET and δ-MIGFET (δ-Multiple Independent Gate Field Effect Transistor) [20][21][22][23][24]. The second one uses the Thomas-Fermi approach, a method which does not require calculation of the electronic structure (eigenfunctions, eigenvalues).…”