Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics

Salazar, R.; Ortíz‐Conde, A.; Sánchez, F.J. Garcı́a; Ho, Chester S.; Liou, Juin J.

doi:10.1016/j.sse.2008.03.018

Cited by 14 publications

(15 citation statements)

References 12 publications

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“…The very mathematical nature of these methods directly contributes in diminishing the effect of measurement error and noise. The effectiveness of integration-based methods, such as those presented here, has been proven already in the extraction of other electron devices' model parameters [9][10][11]. In what follows we will show how such simple methods may be advantageously applied for calculating the sub-threshold slope factor of MOSFETs.…”

Section: Introductionmentioning

confidence: 88%

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Ortíz‐Conde

Sánchez

Liou

et al. 2010

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 88%

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Ortíz‐Conde

Sánchez

Liou

et al. 2010

Microelectronics Reliability

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“…It is important to point out that function D may be understood as a representation or measure of the device's amount of nonlinearity, which for a linear element is obviously equal to zero. This description of function D, in terms of linearity, led us to refer to this function as the "Integral Non Linearity Function" (INLF) [40], [41], and to use it to quantify the non-linear behavior of devices and circuits in terms of distortion.…”

Section: The Integral Difference Function Concept and The G Methodsmentioning

confidence: 99%

A review of diode and solar cell equivalent circuit model lumped parameter extraction procedures

et al. 2014

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This article presents an up-to-date review of several methods used for extraction of diode and solar cell model parameters. In order to facilitate the choice of the most appropriate method for the given particular application, the methods are classified according to their lumped parameter equivalent circuit model: singleexponential, double-exponential, multiple-exponential, with and without series and parallel resistances. In general, methods based on numerical integration or optimization are recommended to reduce the possible uncertainties arising from measurement noise.

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“…The optimum value of ω is a complicated function of E g , E q , and φ b . However, a polynomial expression for ω can be found either by Taylor expansion or the successive integration method [38] leading to:…”

Section: Appendix B Effective Mass For Schottky Barriersmentioning

confidence: 99%

From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling

Ilatikhameneh

Salazar

Klimeck

et al. 2016

IEEE Trans. Electron Devices

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In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (TFETs) based on direct bandgap semiconductors. The model provides closed-form expressions for I-V based on: 1) a modified version of the well-known Fowler-Nordheim (FN) formula (in the ON-state), and 2) an equation which describes the OFF-state performance while providing continuity at the ON/OFF threshold by means of a term introduced as the "continuity factor". It is shown that traditional approaches such as FN are accurate in TFETs only through correct evaluation of the total band bending distance and the "tunneling effective mass". General expressions for these two key parameters are provided. Moreover, it is demonstrated that the tunneling effective mass captures both the ellipticity of evanescent states and the dual (electron/hole) behavior of the tunneling carriers, and it is further shown that such a concept is even applicable to semiconductors with nontrivial energy dispersion. Ultimately, it is found that the I-V characteristics obtained by using this model are in close agreement with state-of-the-art quantum transport simulations both in the ON-and OFF-state, thus providing validation of the analytic approach.

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Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics

Cited by 14 publications

References 12 publications

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

A review of diode and solar cell equivalent circuit model lumped parameter extraction procedures

From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling

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