The high growth temperature of carbon nanotubes (CNTs) hinders their direct assembly
on temperature-sensitive substrates. We present a method to transfer an aligned CNT film
at room temperature to overcome this problem. Using a ‘liftoff’ technique with hydrofluoric
acid solution, we separate the aligned CNT film from the silicon substrate. The lifted-off
CNT film is suspended in water, remaining intact and aligned due to the crowding effect.
We then transfer the suspended film to various substrates that are sensitive to high
temperature. To illustrate the quality of the transferred CNT film, we demonstrate that the
thermal interface resistance of the transferred CNT film is comparable with that of
as-grown CNT film. This transfer process can be extended to many microelectronics
applications, such as field emission devices, integrated circuit interconnects and
sensors, requiring processing temperatures not compatible with CNT growth.
In this paper, a novel low-temperature post-CMOS process to fabricate a microelectromechanical (MEMS) bridge resonator has been developed. The integration of the MEMS resonator with the bulk N-well CMOS process is demonstrated experimentally. The sub-micron gap between the resonator beam and electrodes is defined by the sacrificial polymeric layer thickness and dry released in O2 plasma. The resonator beam is fabricated using single crystal silicon and released using isotropic silicon etch. The effect of floating driving electrodes on the resonator operation has been analyzed and modeled. S-parameter measurement is conducted. Results show a resonant frequency of 64.56 MHz with a quality factor of 60 under atmospheric pressure for a resonator device with the length of 30 µm, width of 4 µm and thickness of 2 µm operating at second resonant mode.
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