Integration of an RF MEMS resonator with a bulk CMOS process using a low-temperature and dry-release fabrication method

Abstract

In this paper, a novel low-temperature post-CMOS process to fabricate a microelectromechanical (MEMS) bridge resonator has been developed. The integration of the MEMS resonator with the bulk N-well CMOS process is demonstrated experimentally. The sub-micron gap between the resonator beam and electrodes is defined by the sacrificial polymeric layer thickness and dry released in O2 plasma. The resonator beam is fabricated using single crystal silicon and released using isotropic silicon etch. The effect of floating driving electrodes on the resonator operation has been analyzed and modeled. S-parameter measurement is conducted. Results show a resonant frequency of 64.56 MHz with a quality factor of 60 under atmospheric pressure for a resonator device with the length of 30 µm, width of 4 µm and thickness of 2 µm operating at second resonant mode.

Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation

“…Microelectromechanical systems (MEMS)-based resonators have attracted the attention of the radio frequency (RF) communications community owing to their high quality factors (Qs) and the ability to integrate these devices with Si integrated circuits (ICs) (Bannon et al 2000;Gong et al 2007). RF applications demand a device technology that spans from very low frequencies to ultra-high frequencies, a range that can be achieved using MEMS and nanoelectromechanical systems (NEMS) (Bannon et al 2000;Gong et al 2007;Huang et al 2005;Leach et al 2001).…”

“…RF applications demand a device technology that spans from very low frequencies to ultra-high frequencies, a range that can be achieved using MEMS and nanoelectromechanical systems (NEMS) (Bannon et al 2000;Gong et al 2007;Huang et al 2005;Leach et al 2001). Silicon carbide (SiC) is a promising material for RF MEMS because of its high Young's modulus-to-density ratio relative to Si, thus increasing the acoustic velocity and fundamental resonant frequency of the vibrating structure relative to Si, but only if high quality factors can be achieved (Huang et al 2003).…”

Electrical Characterization of Microelectromechanical Silicon Carbide Resonators

“…MEMS-based resonators have attracted the attention of the integrated circuits (IC) industry because of their high quality factors (Qs) and their capacity for integration with silicon-based integrated circuits [1, 2]. Silicon-based MEMS resonators are used as timing references in applications that require a device technology that can range from very low to ultra-high frequencies.…”

Static and Motional Feedthrough Capacitance of Flexural Microresonator

“…Microelectromechanical system (MEMS) resonators have attracted the radio frequency communication community's attention because of their excellent characteristics (Qs) [1,2]. Recently, several studies have analyzed and characterized electrical MEMS resonators in order to integrate them fully with an analog circuit.…”