Limits of quality factor in bulk-mode micromechanical resonators

Chandorkar, Saurabh A.; Agarwal, M.; Melamud, R.; Candler, Rob N.; Goodson, Kenneth E.; Kenny, Thomas W.

doi:10.1109/memsys.2008.4443596

Cited by 123 publications

(79 citation statements)

References 3 publications

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“…3 The f·Q product of 6.4 × 10 12 , even though obtained in air, approaches the ultimate range of 10 13 , the highest yet demonstrated at room temperature in silicon mechanical resonators 6,7 and confirmed by theoretical calculation. 19 The power spectral density also provides a reliable way to calibrate the sensitivity of the measurement system. The spectral density of the thermomechanical displacement noise at resonance frequency is Furthermore, the simulated mechanical Q curve also provides guidance for the targeted undercut level to achieve the highest possible Q.…”

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confidence: 99%

“…It is understood that in bulk-mode resonators, the silicon 8 material-loss-limited Q is estimated to be 70,000 at the frequency of 700 MHz. 19 Applying this criterion to the Q curves, only by making u/R either between 0.822 and 0.835 or larger than 0.945 (grayed regions in Fig. 3) can we enter the material-loss-limited regime and achieve the highest possible Q.…”

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confidence: 99%

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High-Q silicon optomechanical microdisk resonators at gigahertz frequencies

Sun

Zhang

Tang

2012

Applied Physics Letters

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confidence: 99%

mentioning

confidence: 99%

High-Q silicon optomechanical microdisk resonators at gigahertz frequencies

Sun

Zhang

Tang

2012

Applied Physics Letters

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“…The FEM results are in agreement with experimental results; however, FEM shows a deeper bandgap as expected. This is due to losses in the experiment such as substrate losses, 24,25 material losses, 5 insertion losses, 26 and due to the Interdigital Transducers (IDTs) only detecting the longitudinal and flexural waves. 27 These experimental losses cause a reduction in the transmission peaks of the devices such that when the PnC is normalized to the slab, the depth of the bandgap is shallower than modeled.…”

Section: Resultsmentioning

confidence: 99%

Ultra-high frequency, high Q/volume micromechanical resonators in a planar AlN phononic crystal

Baboly

Alaie

Reinke

et al. 2016

Journal of Applied Physics

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This paper presents the first design and experimental demonstration of an ultrahigh frequency complete phononic crystal (PnC) bandgap aluminum nitride (AlN)/air structure operating in the GHz range. A complete phononic bandgap of this design is used to efficiently and simultaneously confine elastic vibrations in a resonator. The PnC structure is fabricated by etching a square array of air holes in an AlN slab. The fabricated PnC resonator resonates at 1.117 GHz, which corresponds to an out-of-plane mode. The measured bandgap and resonance frequencies are in very good agreement with the eigen-frequency and frequency-domain finite element analyses. As a result, a quality factor/volume of 7.6 × 1017/m3 for the confined resonance mode was obtained that is the largest value reported for this type of PnC resonator to date. These results are an important step forward in achieving possible applications of PnCs for RF communication and signal processing with smaller dimensions.

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“…The fi lm resistivities of Type K and Type R are 40 Ω-cm and 6.62 Ω-cm, (8,17) respectively. This indicates that Type K has a higher crystallization and electrical resistivity than Type R, as determined by electrical measurement.…”

Section: Electrical Resistivity Of Sic Versus Quality Factormentioning

confidence: 99%

“…The Akhieser effect is purely material-property-related. Although SiCbased micromachined resonators have been available for more than a decade, and are considered to comprise one of the highest achievable Q-multiplied-by-operating frequency materials, (8) only a handful of research studies have been able to characterize the energy loss mechanisms in these devices. An early effort by Su et al focused on describing the Q of micromachined cantilever-based resonators made from SiC fi lms.…”

Section: Introductionmentioning

confidence: 99%

Solid Internal Energy Dissipation of 3C Single-Crystal Silicon Carbide Micromechanical Resonators by Heterojunction Growth on Silicon

2010

Sensors and Materials

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A previous report shows that a 100-nm-thick free-free beam, single-crystal silicon carbide (SiC) resonator has quality factors 10 times lower than those made with a 10-μm-thick single-crystal SiC cantilever even though the free-free beam is supposed to have lower clamping loss. (1,2) This manuscript explores the above-mentioned difference using the heterojunction growth of (110) 3C-silicon carbide deposited as structural fi lms of micromechanical resonators on single-crystal silicon and polycrystalline silicon. The polycrystalline SiC resonators with smaller clamping losses were fabricated to contrast with the resonators made of single-crystal SiC. The analysis showed that solid internal energy dissipation may play a more important role than the other losses operated in tens of kilohertz. The resonators with a 2-μm-thick single-crystal SiC having Qs between the previous reports may suggest a higher defect density near the interface, which causes high solid internal dissipation. Although an electrical measurement technique was used, the dominance of this material property appeared to be due to grain size instead of conductivity.

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Limits of quality factor in bulk-mode micromechanical resonators

Cited by 123 publications

References 3 publications

High-Q silicon optomechanical microdisk resonators at gigahertz frequencies

High-Q silicon optomechanical microdisk resonators at gigahertz frequencies

Ultra-high frequency, high Q/volume micromechanical resonators in a planar AlN phononic crystal

Solid Internal Energy Dissipation of 3C Single-Crystal Silicon Carbide Micromechanical Resonators by Heterojunction Growth on Silicon

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