Stimulated Brillouin scattering (SBS) is traditionally viewed as a process whose strength is dictated by intrinsic material nonlinearities with little dependence on waveguide geometry. We show that this paradigm breaks down at the nanoscale, as tremendous radiation pressures produce new forms of SBS nonlinearities. A coherent combination of radiation pressure and electrostrictive forces is seen to enhance both forward and backward SBS processes by orders of magnitude, creating new geometric degrees of freedom through which photon-phonon coupling becomes highly tailorable. At nanoscales, the backward-SBS gain is seen to be 10 4 times greater than in conventional silica fibers with 100 times greater values than predicted by conventional SBS treatments. Furthermore, radically enhanced forward-SBS processes are 10 5 times larger than any known waveguide system. In addition, when nanoscale silicon waveguides are cooled to low temperatures, a further 10-100 times increase in SBS gain is seen as phonon losses are reduced. As a result, a 100-m segment of the waveguide has equivalent nonlinearity to a kilometer of fiber. Couplings of this magnitude would enable efficient chip-scale stimulated Brillouin scattering in silicon waveguides for the first time. More generally, we develop a new full-vectorial theoretical formulation of stimulated Brillouin scattering that accurately incorporates the effects of boundary-induced nonlinearities and radiation pressure, both of which are seen to have tremendous impact on photonphonon coupling at subwavelength scales. This formalism, which treats both intermode and intramode coupling within periodic and translationally invariant waveguide systems, reveals a rich landscape of new stimulated Brillouin processes when applied to nanoscale systems.
Phononic crystals (PnCs) are the acoustic wave equivalent of photonic crystals, where a periodic array of scattering inclusions located in a homogeneous host material causes certain frequencies to be completely reflected by the structure. In conjunction with creating a phononic band gap, anomalous dispersion accompanied by a large reduction in phonon group velocities can lead to a massive reduction in silicon thermal conductivity. We measured the cross plane thermal conductivity of a series of single crystalline silicon PnCs using time domain thermoreflectance. The measured values are over an order of magnitude lower than those obtained for bulk Si (from 148 W m(-1) K(-1) to as low as 6.8 W m(-1) K(-1)). The measured thermal conductivity is much smaller than that predicted by only accounting for boundary scattering at the interfaces of the PnC lattice, indicating that coherent phononic effects are causing an additional reduction to the cross plane thermal conductivity.
Phononic crystals have numerous potential applications including use as filters and oscillators in communications systems and as acoustic isolators for resonant sensors such as gyroscopes. These applications are based on the ability of phononic crystals to exhibit elastic band gaps, frequency bands where the propagation of acoustic waves is forbidden. Here, we focus on solid-solid phononic crystals (solid inclusions in a solid matrix), since they typically exhibit wider band gaps than those observed with air-solid phononic crystals (air inclusions in a solid matrix). We present a micromachined solid-solid phononic crystal operating at 1.4 GHz center frequency with an ultrawide 800 MHz band gap.
A technique based on suspended islands is described to measure the in-plane thermal conductivity of thin films and nano-structured materials, and is also employed for measurements of several samples with a single measurement platform. Using systematic steps for measurements, the characterization of the thermal resistances of a sample and its contacts are studied. The calibration of the contacts in this method is independent of the geometry, size, materials, and uniformity of contacts. To verify the technique, two different Si samples with different thicknesses and two samples of the same SiN(x) wafer are characterized on a single device. One of the Si samples is also characterized by another technique, which verifies the current results. Characterization of the two SiN(x) samples taken from the same wafer showed less than 1% difference in the measured thermal conductivities, indicating the precision of the method. Additionally, one of the SiN(x) samples is characterized and then demounted, remounted, and characterized for a second time. The comparison showed the change in the thermal resistance of the contact in multiple measurements could be as small as 0.2 K/μW, if a similar sample is used.
The thermal conductivity of single crystal silicon was engineered to be as low as 32.6W/mK using lithographically defined phononic crystals (PnCs), which is only one quarter of bulk silicon thermal conductivity [1]. Specifically sub-micron through-holes were periodically patterned in 500nm-thick silicon layers effectively enhancing both coherent and incoherent phonon scattering and resulting in as large as a 37% reduction in thermal conductivity beyond the contributions of the thin-film and volume reduction effects. The demonstrated method uses conventional lithography-based technologies that are directly applicable to diverse micro/nano-scale devices, leading to potential performance improvements where heat management is important.
Recent work has demonstrated that nanostructuring of a semiconductor material to form a phononic crystal (PnC) can significantly reduce its thermal conductivity. In this paper, we present a classical method that combines atomic-level information with the application of Bloch theory at the continuum level for the prediction of the thermal conductivity of finite-thickness PnCs with unit cells sized in the micron scale. Lattice dynamics calculations are done at the bulk material level, and the plane-wave expansion method is implemented at the macrosale PnC unit cell level. The combination of the lattice dynamics-based and continuum mechanics-based dispersion information is then used in the Callaway-Holland model to calculate the thermal transport properties of the PnC. We demonstrate that this hybrid approach provides both accurate and efficient predictions of the thermal conductivity.
We investigate the optimal conditions for bandgap formation in square-lattice phononic crystal (PnC) slabs composed of a solid matrix with solid or air inclusions. To ensure sufficient impedance mismatch (key for bandgap formation) and fabrication amenability, silicon and silica were chosen as candidate matrix materials with either air or tungsten inclusions. Solid-solid PnCs were found to exhibit larger bandgaps while relaxing the topological constraints as compared to solid-air PnCs for all but the largest filling fractions. We also demonstrate a hybridized lattice incorporating both air and solid inclusions in the matrix that further relaxes the constraints for realizing wide bandgaps.
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