Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

Koh, M.; Mizubayashi, Wataru; Iwamoto, Kunihiko; Murakami, Hideki; Ono, Tatsuyoshi; Tsuno, M.; Mihara, Toshiyuki; Shibahara, Kentaro; Miyazaki, S.; Hirose, Masataka

doi:10.1109/16.902724

Cited by 76 publications

(42 citation statements)

References 16 publications

(20 reference statements)

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“…[25][26][27][28] The residual minimization method of direct inversion in the iterative subspace (RMM-DIIS) was used to calculate the ground state of electrons. 29,30 More precisely, Si atom 3s 2 2 states, and H atom 1s 1 state were treated as valence wave functions. The cutoff energy was 500 eV, and the k-points mesh was 2 × 2 × 1, using MonkhorstPack for the slab superstructure with a 20 Å vacuum layer.…”

Section: Calculation Detailsmentioning

confidence: 99%

“…However, the direct tunneling of electrons through the gate oxide becomes substantial for silicon oxide (SiO 2 ) layers below 1.2 nm thick. 2 Recently, high dielectric constant (high-k) materials have replaced SiO 2 as gate oxide materials. 3 Their necessary capacitance can be achieved with the thicker film, thereby avoiding the direct tunneling problem.…”

Section: Introductionmentioning

confidence: 99%

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Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

Kim¹,

Kim²,

Jeong³

et al. 2010

Bulletin of the Korean Chemical Society

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We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom's lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 -0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 -0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.

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Section: Calculation Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

Kim¹,

Kim²,

Jeong³

et al. 2010

Bulletin of the Korean Chemical Society

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show abstract

“…Reducing the oxide layer thickness will lead to problems of tunneling leakage current through the source/drain and substrate. [1,2] Defect may also occur in thin oxide film. The gate oxide leakage is observed in MOSFET systems.…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxide Layer in Metal-Oxide-Semiconductor Systems

Fan

Lee

2016

MATEC Web Conf.

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Abstract. In this work, we investigate the electrical properties of oxide layer in the metal-oxide semiconductor field effect transistor (MOSFET). The thickness of oxide layer is proportional to square root of oxidation time. The feature of oxide layer thickness on the growth time is consistent with the Deal-Grove model effect. From the current-voltage measurement, it is found that the threshold voltages (Vt) for MOSFETs with different oxide layer thicknesses are proportional to the square root of the gate-source voltages (Vgs). It is also noted that threshold voltage of MOSFET increases with the thickness of oxide layer. It indicates that the bulk effect of oxide dominates in this MOSFET structure.

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“…Quantum-mechanical tunneling through ultrathin gate oxides and carrier-mobility degradation due to high channel doping are issues which place limitations on bulk-Si MOSFET scaling, however [1], [2]. Recently, new transistor structures such as the ultrathin body (UTB) MOSFET and double-gate FinFET have been proposed to improve the scalability of the MOSFET, for CMOS technology generations beyond the 65-nm technology node [3].…”

Section: Introductionmentioning

confidence: 99%

Molybdenum Gate Technology for Ultrathin-Body MOSFETs and FinFETs

Takeuchi

Choi

et al. 2004

IEEE Trans. Electron Devices

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Abstract-Damage-free sputter deposition and highly selective dry-etch processes have been developed for molybdenum (Mo) metal gate technology, for application to fully depleted silicon-on-insulator ( devices such as the ultrathin body (UTB) MOSFET and double-gate FinFET. A plasma charge trap effectively eliminates high-energy particle bombardment during Mo sputtering; hence the gate-dielectric integrity (TDDB, BD ) is significantly improved and the field-effect mobility in Mo-gated MOSFETs follows the universal mobility curve. The effects of etch process parameters such as chlorine (Cl 2 ) and oxygen (O 2 ) gas flow rate, and source and bias radio frequence powers, were investigated in order to optimize the Mo etch rate and selectivity to SiO 2 . A highly selective etch process was successfully applied to pattern Mo gate electrodes for UTB MOSFETs and FinFETs without leaving any residue or stringers. Measured electrical characteristics and physical analysis results are discussed.Index Terms-Complementary metal-oxide-semiconductor (CMOS), dry etching, FinFET, fully depleted silicon-on-insulator (FD SOI), molybdenum metal gate, sputter, ultrathin body.

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Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

Cited by 76 publications

References 16 publications

Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

Effect of Oxide Layer in Metal-Oxide-Semiconductor Systems

Molybdenum Gate Technology for Ultrathin-Body MOSFETs and FinFETs

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