2013
DOI: 10.1016/j.egypro.2013.07.312
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Light Induced Degradation and Regeneration of High Efficiency Cz PERC Cells with Varying Base Resistivity

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Cited by 26 publications
(10 citation statements)
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“…Thus, the BO defect is ruled out as the root cause for the strong LID present in qm‐Si. On the other hand, the ∼2% rel LID seen in the Cz‐PERC is in agreement with both experimental and simulated BO‐LID in similar materials .…”
Section: Resultssupporting
confidence: 88%
“…Thus, the BO defect is ruled out as the root cause for the strong LID present in qm‐Si. On the other hand, the ∼2% rel LID seen in the Cz‐PERC is in agreement with both experimental and simulated BO‐LID in similar materials .…”
Section: Resultssupporting
confidence: 88%
“…Hence oxygen precipitates represent a large potential limitation for the efficiencies of solar cells fabricated using both n-and p-type Cz grown silicon. For boron-doped Cz material, the performance loss due to oxygen precipitates may be somewhat reduced due to losses from other oxygen related defects such as boron-oxygen defects, which have shown a 3% relative loss in efficiency for solar cells of the same resistivity [16]. However, this will become more relevant as approaches are further developed for the hydrogen passivation of boron-oxygen defects [17].…”
Section: Oxygen Precipitatesmentioning
confidence: 99%
“…Current research topics related to addressing these issues include developing higher-resistivity encapsulant materials to reduce risk of potential induced degradation; formulating encapsulant materials that do not change color (by yellowing or exhibiting "snail trails"); designing modules to exhibit fewer cracked cells, broken ribbons, and failed solder bonds; and developing encapsulant materials and lamination techniques that result in packaging without signs of delamination or chemical corrosion. For p-type crystalline-silicon cells, another important research topic relates to heat-and light-induced degradation of the cells due to the formation of boron-oxygen complexes and the formation of dangling bonds on the frontside of the cell due to ultraviolet (UV) radiation damage (Wohlny et al 2013). These and multiple other research efforts could guide module designs toward products that can last 40-50 years in some or all climates.…”
Section: Technology Advances For Improved Lifetime and Decreased Degrmentioning
confidence: 99%