Light-emitting organic field-effect transistor using an organic heterostructure within the transistor channel

Vusser, Stijn De; Schols, Sarah; Verlaak, Stijn; Genoe, Jan; Oosterbaan, Wibren D.; Lutsen, Laurence; Vanderzande, Dirk; Heremans, Paul

doi:10.1063/1.2392937

Cited by 36 publications

(33 citation statements)

References 20 publications

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“…[7][8][9] For inorganic and insoluble, vacuum-sublimed organic semiconductors, such junctions are the basis of many advanced optoelectronic device architectures. [10][11][12] Here we introduce a simple, versatile, high resolution, and clean photolithographic patterning method, which can be applied to all common TFT architectures as well as a wide range of solution-processed organic semiconductors without device degradation and allows precise alignment of the semiconductor pattern with respect to previously defi ned electrodes and other substrate structures. Recently, a similar patterning method was developed independently.…”

Section: Introductionmentioning

confidence: 99%

Conjugated‐Polymer‐Based Lateral Heterostructures Defined by High‐Resolution Photolithography

Chang

Gwinner

Caironi

et al. 2010

Adv Funct Materials

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Solution processing of polymer semiconductors provides a new paradigm for large-area electronics manufacturing on fl exible substrates, but it also severely restricts the realization of interesting advanced device architectures, such as lateral heterostructures with defi ned interfaces, which are easily accessible with inorganic materials using photolithography. This is because polymer semiconductors degrade, swell, or dissolve during conventional photoresist processing. Here a versatile, high-resolution photolithographic method is demonstrated for patterning of polymer semiconductors and exemplify this with high-performance p-type and n-type fi eld-effect transistors (FETs) in both bottom-and top-gate architectures, as well as ambipolar light-emitting fi eld-effect transistors (LEFETs), in which the recombination zone can be pinned at a photolithographically defi ned lateral heterojunction between two semiconducting polymers. The technique therefore enables the realization of a broad range of novel device architectures while retaining optimum materials performance.

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Section: Introductionmentioning

confidence: 99%

Conjugated‐Polymer‐Based Lateral Heterostructures Defined by High‐Resolution Photolithography

Chang

Gwinner

Caironi

et al. 2010

Adv Funct Materials

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“…An overlapping p-n heterostructure (P13/O-octyl-OPV5) can be confi ned inside the transistor channel by changing the tilt angle of the substrate during the sequential deposition process (Figure 8(c)) [69]. …”

Section: Organic Light-emitting Fi Eld-eff Ect Transistorsmentioning

confidence: 99%

Organic heterostructures in organic field-effect transistors

2010

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C onsiderable eff ort has been devoted to the development of low-cost, fl exible, large-area organic electronics for consumer products over the past two decades [1][2][3]. Organic fi eld-eff ect transistors (OFETs), important organic electronic devices, are of considerable interesting due to their wide range of potential applications, including use as display drivers and in identifi cation tags and sensors. Many methods have been developed to improve OFET performance by increasing mobility and the on/off ratio, and by reducing the threshold voltage. Th ese improvements have been achieved through the synthesis of new organic semiconductor materials, improving the device structure, controlling the deposition of crystalline organic fi lms and adopting various organic heterostructures. Recently, OFETs exhibiting mobility of the same order of magnitude as that of amorphous silicon FETs have been successfully demonstrated.Organic heterostructures have been used in organic light-emitting diodes (OLEDs) and organic photovoltaic (OPV) cells to improve device performance. In a typical double-layer OLED structure [4], the organic heterojunction reduces the onset voltage and improves the illumination effi ciency. Organic heterojunctions have also been used to improve the power conversion effi ciency of OPV cells by an order of magnitude over single-layer cells [5]. Ambipolar OFETs, which require that both electrons and holes be accumulated and transported in the device channel depending on the applied voltage, were fi rst realized by introducing organic heterostructures as active layers [6]. It is therefore clear that organic heterostructures have an important role in the continued development of organic electronic devices. Th e introduction of organic heterostructures has signifi cantly improved device performance and allowed new functions in many applications, and so understanding the eff ects of the organic heterostructure is desirable and necessary.Th ere has been considerable focus on understanding the interfacial electronic structures of organic heterostructure consisting of amorphous or semi-crystalline organic semiconductors [7][8][9]. Various models have been proposed to predict the alignment of the vacuum level and the interface dipole in certain organic heterojunctions [8,9], and a dependence of the interface dipole on the molecular orientation has been reported [10]. In crystalline organic semiconductors, the phenomenon of band bending [11,12] has been observed at organic/inorganic and organic/organic interfaces, and band transport, in which orbital-derived electronic bands are produced due to the overlap of the π-orbitals of adjacent molecules, has also been argued [13].Th e recent discovery of high conductivity in heterojunction transistors constructed using thin crystalline fi lms of p-type copper phthalocyanine (CuPc) and n-type copper-hexadecafl uoro-phthalocyanine (F 16 CuPc) as active layers has stimulated interest in organic heterojunctions [14][15][16]. Electron-and hole-accumulation layers have been ob...

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“…Two component layered films consisting of a charge transport layer and a light emitting layer could be an alternative approach to achieve this goal. This approach is possible for the evaporated organic films [11][12][13][14] but challenging for the spin cast films.…”

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confidence: 99%