Conjugated‐Polymer‐Based Lateral Heterostructures Defined by High‐Resolution Photolithography

Abstract

Solution processing of polymer semiconductors provides a new paradigm for large-area electronics manufacturing on fl exible substrates, but it also severely restricts the realization of interesting advanced device architectures, such as lateral heterostructures with defi ned interfaces, which are easily accessible with inorganic materials using photolithography. This is because polymer semiconductors degrade, swell, or dissolve during conventional photoresist processing. Here a versatile, high-resolution photolithographic method is demonstrated for patterning of polymer semiconductors and exemplify this with high-performance p-type and n-type fi eld-effect transistors (FETs) in both bottom-and top-gate architectures, as well as ambipolar light-emitting fi eld-effect transistors (LEFETs), in which the recombination zone can be pinned at a photolithographically defi ned lateral heterojunction between two semiconducting polymers. The technique therefore enables the realization of a broad range of novel device architectures while retaining optimum materials performance.

Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission

“…The EL spectra with their emission maxima at $538 nm are characteristic of F8BT and in good agreement with earlier studies [4,12]. Using reported methods [11] we calculated the external quantum efficiency (EQE) of P(VDF-TrFE) and PTrFE transistors from the total photocurrent (detailed calculations are given in Section 2: Experimental). We obtained a maximum value of 1.06% and 0.16% for the P(VDF-TrFE) and PTrFE transistors, respectively.…”

Fluorosurfactant-assisted photolithography for patterning of perfluoropolymers and solution-processed organic semiconductors for printed displays

“…2(f )]. This technique is similar to the previously reported method by Chang et al 21) but it is simpler in that our process does not require a vacuum-evaporation process for preparing an ultrathin adhesive layer. A wet-etching technique has also been developed using a fluorosolvent of FC-43 (3M) as an etchant for Cytop [5 in Fig.…”

Binary Host‐induced Exciplex Enabled High Color‐Rendering Index of 94 for Carbon Quantum Dot‐Based White Light‐Emitting Diodes

“…To further validate the universality of the device architecture, we selected two prevalent hole‐transport materials for investigation, namely, TFB (hole mobility: ≈10 −4 cm 2 V −1 S −1 ) and Poly‐TPD (hole mobility: ≈10 −4 cm 2 V −1 S −1 ), for comparative analysis (Figure S9 , Supporting Information). [ 62 , 63 ] Figure S10 (Supporting Information) illustrates the corresponding PL spectra of thin films of the host‐guest strategy of TFB:CQDs, the exciplex of TFB:PO‐T2T, and the co‐host strategy of TFB:CQDs:PO‐T2T. The exciplex peaks produced by TFB and PO‐T2T appear at ≈540 nm.…”