Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission

Li, Xiaoran; Breemen, Albert J. J. M. van; Khikhlovskyi, V.; Smits, Edsger C. P.; Kemerink, Martijn; Broer, Dirk J.

doi:10.1016/j.orgel.2012.05.021

Cited by 4 publications

(4 citation statements)

References 38 publications

(63 reference statements)

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“…The effect of the fluorinated high- k dielectrics is very similar to the channel carrier modulation (accumulation of holes and depletion of electrons) produced by fluorinated SAMs, as reported by Kobayashi et al . In addition, G. Gelinck et al, reported similar results in polymer light emitting transistors with ferroelectric polymers as gate dielectrics . We can finally achieve high, well-balanced μ FET,e and μ FET,h values under relatively low-voltage operation (at V d = ± 10 V) by the proper selection of the concentrations of P(VDF-TrFE) and PMMA.…”

Section: Resultssupporting

confidence: 76%

“…In addition, G. Gelinck et. al., reported similar results in polymer light emitting transistors with ferroelectric polymers as gate dielectrics 41. We can finally achieve high, well-balanced µ FET,e and µ FET,h values under relatively low-voltage operation (at V d = ±10 V) by the proper selection of the concentrations of P(VDF-TrFE) and PMMA.…”

supporting

confidence: 69%

“…28 In addition, G. Gelinck et al, reported similar results in polymer light emitting transistors with ferroelectric polymers as gate dielectrics. 41 We can finally achieve high, well-balanced μ FET,e and μ FET,h values under relatively low-voltage operation (at V d = ± 10 V) by the proper selection of the concentrations of P(VDF-TrFE) and PMMA. The V Th,h and V Th,e values were also relatively small, below 4 V, for a specific blend composition, i.e., a 7:3 blend ratio between P(VDF-TrFE) and PMMA (see Figure 6a).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

See 2 more Smart Citations

Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits

Baeg

Khim

Kim

et al. 2012

ACS Appl. Mater. Interfaces

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We report here the development of high-performance p- and n-channel organic field-effect transistors (OFETs) and complementary circuits using inkjet-printed semiconducting layers and high-k polymer dielectric blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA). Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} (P(NDI2OD-T2)) OFETs typically show high field-effect mobilities (μ(FET)) of 0.2-0.5 cm²/(V s), and their operation voltage is effectively reduced to below 5 V by the use of P(VDF-TrFE):PMMA blends. The main interesting result is that the OFET characteristics could be tuned by controlling the mixing ratio of P(VDF-TrFE) to PMMA in the blended dielectric. The μ(FET) of the PC12TV12T OFETs gradually improves, whereas the P(NDI2OD-T2) OFET properties become slightly worse as the P(VDF-TrFE) content increases. When the mixing ratio is optimized, well-balanced hole and electron mobilities of more than 0.2 cm²/(V s) and threshold voltages below ±3 V are obtained at a 7:3 ratio of P(VDF-TrFE) to PMMA. Low-voltage-operated (∼2 V) printed complementary inverters are successfully demonstrated using the blended dielectric and exhibit an ideal inverting voltage of nearly half of the supplied bias, high voltage gains of greater than 25, and excellent noise margins of more than 75% of the ideal values.

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Section: Resultssupporting

confidence: 76%

supporting

confidence: 69%

Section: ■ Results and Discussionmentioning

confidence: 99%

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Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits

Baeg

Khim

Kim

et al. 2012

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

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“…Since the polarity of the transistors depends on the side gate voltage, a NAND circuit can be electrically reconfigured into a NOR circuit and vice versa. Electrically reconfigurable gates find relevant application for the development of programmable logic circuits, field-programmable gate arrays, and microprocessors 9 46 47 . Moreover, the availability of both NAND and NOR gates provides a more efficient implementation in terms of number of logic gates and mapping functions.…”

Section: Resultsmentioning

confidence: 99%

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors

Yoo

Ghittorelli

Smits

et al. 2016

Sci Rep

Self Cite

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Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

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Soft Ferroelectrics Enabling High‐Performance Intelligent Photo Electronics

2020

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There has been a significant success in the synthesis of materials based on novel ferroelectric switching principles [10,11] and crystal engineering [12] (maximizing the ferroelectric properties for interface engineering to optimize contacts in devices). One evidence is that soft ferroelectrics have become crucial, particularly with the recent advancements in humanconnected electronics owing to extensive research success in human-machine interactive information, human safety, and human sustainability. [13] For instance, soft ferroelectrics with nonvolatile information storage capacity have been used in neuromorphic synaptic devices that can mimic the human neuronal system. [14][15][16][17][18][19][20][21] Relying on the piezoelectric properties possess by all soft ferroelectrics, a variety of tactile sensing memories that can simultaneously detect and store various tactile stimuli, such as pressure and friction, have been developed. [22,23] Specifically, soft ferroelectric domains embedded in semiconducting mediums are electrically programmable in remnant polarization, and the resulting programmed electric field successfully modulates the carrier transport of the semiconducting layer, leading to the development of not only high-performance photoelectronic devices but also those with new functionalities. [24,25] To design soft ferroelectrics materials for human-connected electronics properly, a comprehensive understanding of ferroelectric molecular switching mechanisms is necessary. It is also critical for understanding the intrinsic properties (such as working temperature, power consumption, amount of internal field related to Curie temperature, coercive field, and remnant polarization) of soft ferroelectrics that are technologically appropriate for device operation. This will make them suitable for developing human-connected electronics. Thus, proper screening of soft ferroelectrics by targeting complementary electronic devices is also necessary. Efforts should be made to control the crystallization during the preparation of thin, uniform, and pinhole-free soft ferroelectric films by controlling the solute-solvent chemistry of composition. The recent development of these micro-and nanostructured approaches suggests that multiscale, multidimension, and periodic microor nanopatterned soft ferroelectrics will not only significantly enhance the efficiency of various photoelectronic devices, but it will also result in new novel functionalities (such as anisotropic and directional photoelectronic properties) and thus Soft ferroelectrics based on organic and organic-inorganic hybrid materials have gained much interest among researchers owing to their electrically programmable and remnant polarization. This allows for the development of numerous flexible, foldable, and stretchable nonvolatile memories, when combined with various crystal engineering approaches to optimize their performance. Soft ferroelectrics have been recently considered to have an important role in the emerging human-connected electronics that involve...

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Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission

Cited by 4 publications

References 38 publications

Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits

Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors

Soft Ferroelectrics Enabling High‐Performance Intelligent Photo Electronics

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