Inorganic semiconductor‐based broadband photodetectors are ubiquitous in imaging technologies such as digital cameras and photometers. Herein a broadband organic photodiode (OPD) that has performance metrics comparable or superior to inorganic photodiodes over the same spectral range is reported. The photodiode with an active layer comprised of a poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)]:[6,6]‐phenyl‐C71‐butyric acid methyl ester bulk heterojunction blend had a dark current < 1 nA/cm2, specific detectivity of ∼1013 Jones, reverse bias −3 dB frequency response of 100 kHz to 1 MHz, and state‐of‐the‐art Linear Dynamic Range for organic photodiodes of nine orders of magnitude (180 dB). The key to these performance metrics was the use of a thick junction (700 nm), which flattened the spectral response, reduced the dark current and decreased performance variations. The strategy also provides a route to large area defect free “monolithic” structures for low noise integrated photo‐sensing, position determination, or contact, non‐focal imaging.

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A simple convergent procedure has been developed for the preparation of solution processable phosphorescent dendrimers with biphenyl-based dendrons and fac-tris(2-phenylpyridyl)iridium(III) cores. We found that the attachment point and branching of the dendrons are important for controlling the color of the light emission. Photoluminescence excitation measurements showed that energy could be transferred efficiently from the dendrons to the core. Solution photoluminescence quantum yield (PLQY) measurements of the dendrimers were of order 70%, showing that the attachment of the dendron did not decrease the luminescence efficiency of the core iridium complex. The PLQYs of the neat dendrimer films increased with generation with the second-generation dendrimer having a neat film PLQY of 31%, 1 1 /2 times higher than the first-generation dendrimers and almost 3 times that of the nondendritic iridium complex, demonstrating the power of the dendrimer architecture to control intermolecular interactions. Electrochemical experiments showed that charge was injected directly into the core of the dendrimers.

Stable emission in glass Lead halide perovskites can exhibit bright, narrow band photoluminescence but have stability issues related to formation of inactive phases and the loss of lead ions. Hou et al . show that the black, photoactive phase of cesium lead iodide can be stabilized by forming a composite with a glassy phase of a metal-organic framework through liquid-phase sintering. The photoluminescence is at least two orders of magnitude greater than that of the pure perovskite. The glass stabilizes the perovskite under high laser excitation, and about 80% of the photoluminescence was maintained after 10,000 hours of water immersion. —PDS

An innovative design strategy for light emitting field effect transistors (LEFETs) to harvest higher luminance and switching is presented. The strategy uses a non-planar electrode geometry in tri-layer LEFETs for simultaneous enhancement of the key parameters of quantum efficiency, brightness, switching, and mobility across the RGB color gamut.

By comparing the changes in pi-pi* absorption with the transconductance in PEO-LiClO4 electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from dsigma(T)/dT > 0 to dsigma(T)/dT approximately 0 as a function of the source-drain voltage. High current densities, up to 10(6) A/cm2 at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films.

All solution-processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.

A solution‐processible phosphorescent dendrimer, which has a fac‐tris(2‐phenylpyridyl)iridium(III) complex at its core and is encapsulated by six first‐generation dendrons (see Figure), eliminates luminescence quenching in the solid state. The dendrimer can be used as a host‐free light‐emitting layer to give highly efficient bilayer dendrimer light‐emitting diodes.