Light and heat induced interdiffusion in Sb/As2S3 nano-multilayered film

Naik, Ramakanta; Ganesan, R.; Adarsh, K. V.; Sangunni, K. S.; Takáts, Viktor; Kökényesi, S.

doi:10.1016/j.jnoncrysol.2009.05.062

Cited by 18 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The photo-induced effect results in a decrease of the film thickness (photo-contraction) as shown in table 2, also seen in [31,32]. It is observed that the refractive index of the film decreases with light exposure (figure 4), which is supported by previous studies on various other types of high intensity photoexposures [27,33].…”

Section: Ftir Analysissupporting

confidence: 80%

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Naik¹,

Jena²,

Ganesan³

et al. 2015

Laser Phys.

Self Cite

View full text Add to dashboard Cite

The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated from transmission spectra measured by FTIR spectroscopy. The material exhibits photo-bleaching (PB) when exposed to band gap light for a prolonged time in a vacuum. The PB is ascribed to structural changes inside the film as well as surface photo-oxidation. The amorphous nature of thin films was detected by x-ray diffraction. The chemical composition of the deposited thin films was examined by energy dispersive x-ray analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on an inverse synthesis method and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model. It was found that the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman and x-ray photoelectron spectra (XPS) were measured and decomposed into several peaks that correspond to the different structural units which support the optical changes.

show abstract

Section: Ftir Analysissupporting

confidence: 80%

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Naik¹,

Jena²,

Ganesan³

et al. 2015

Laser Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The thermal energy given to the films annealed out the defects and thus the degree of disorder was reduced. So, the reduction in the defect density alters the band gap for the annealed films [25,26]. That is, the films' optical properties of change with the annealing temperature.…”

Section: Optical Propertiesmentioning

confidence: 99%

Effects of annealing on SnS films produced by chemical bath deposition (CBD)

Özmen¹,

Temiz²,

Gubur³

2022

Phys. Scr.

View full text Add to dashboard Cite

Tin sulfide (SnS) thin films were produced on glass substrates at 65 ºC by chemical bath deposition (CBD). Two of the obtained five identical films were annealed in an air atmosphere while the other two were annealed in a nitrogen atmosphere at different temperatures. The effects of annealing (at 150 °C and 250 °C in air and nitrogen atmospheres) on the optical, structural, and electrical properties of the films were investigated by UV-visible spectrophotometer, X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and Hall-effect measurement. The energy band gap of as-deposited SnS thin film was determined to be 1.16 eV, and it was observed to change with annealing. All of the as-deposited and annealed SnS films had orthorhombic structures. The optical phonon modes to orthorhombic SnS phases were determined by Raman shifts. The carrier type of all SnS films was identified as p-type using Hall measurement, and the changing carrier concentration, mobility, and resistivity values of the films were investigated depending on annealing conditions. The p-type SnS film can be used as an alternative material for the absorber layer in p-n heterojunction solar cell applications.

show abstract

“…The reduction of transmission, increase in absorption coefficient and increase of the band gap of 0.05 eV from the as-prepared bilayer lm are due to the diffusion of Bi into the As 2 Se 3 matrix. The Bi layer has diffused into the As 2 Se 3 layer for a certain distance which depends on the diffusion length of Bi and has formed a three- This type of solid solution formation has been studied in other different types of lms [42][43][44] and is responsible for the increase in optical band gap of the irradiated lm. Aer inter-diffusion, the three-component Bi-As-Se solid solution is created with the decreasing width of the optical band gap in comparison with homogeneous amorphous As 2 Se 3 lm.…”

mentioning

confidence: 99%

Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques

Behera

Naik

2017

RSC Adv.

Self Cite

View full text Add to dashboard Cite

Amorphous chalcogenide semiconducting materials are very sensitive to electromagnetic radiation and are useful for infrared optics and play a pivotal role in modern technology. In the present article, As 2 Se 3 and bilayer Bi/As 2 Se 3 thin films were prepared by thermal evaporation method. The 532 nm laser induced diffusion of active Bi top layer into barrier As 2 Se 3 film was probed through spectroscopic techniques. An X-ray diffraction study reveals no structural change due to laser irradiation while the optical parameters are affected by both Bi addition and laser irradiation which brings a change in the transmittivity and absorption coefficient. The indirect optical band gap is found to be decreased by 0.11 eV due to Bi addition to As 2 Se 3 which is explained on the basis of density of defect states with an increase in disorder.The laser irradiated Bi diffusion increases the optical band gap by 0.05 eV (photobleaching) with a decrease in disorder. The Tauc parameter and Urbach energy which measures the degree of disorder change with Bi doping and irradiation. The refractive index is modified by the illumination process which is useful for optical applications. The optical property change is well supported by X-ray photoelectron core level spectra and Raman spectra.

show abstract

Light and heat induced interdiffusion in Sb/As2S3 nano-multilayered film

Cited by 18 publications

References 17 publications

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Effects of annealing on SnS films produced by chemical bath deposition (CBD)

Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques

Contact Info

Product

Resources

About

Light and heat induced interdiffusion in Sb/As2S3 nano-multilayered film

Cited by 18 publications

References 17 publications

Photo-induced optical bleaching in Ge12Sb25S63amorphous chalcogenide thin films: effect of 532 nm laser illumination

Photo-induced optical bleaching in Ge12Sb25S63amorphous chalcogenide thin films: effect of 532 nm laser illumination

Effects of annealing on SnS films produced by chemical bath deposition (CBD)

Optical band gap tuning by laser induced Bi diffusion into As2Se3film probed by spectroscopic techniques

Contact Info

Product

Resources

About

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques