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Tin sulfide (SnS) thin films were produced on glass substrates at 65 ºC by chemical bath deposition (CBD). Two of the obtained five identical films were annealed in an air atmosphere while the other two were annealed in a nitrogen atmosphere at different temperatures. The effects of annealing (at 150 °C and 250 °C in air and nitrogen atmospheres) on the optical, structural, and electrical properties of the films were investigated by UV-visible spectrophotometer, X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and Hall-effect measurement. The energy band gap of as-deposited SnS thin film was determined to be 1.16 eV, and it was observed to change with annealing. All of the as-deposited and annealed SnS films had orthorhombic structures. The optical phonon modes to orthorhombic SnS phases were determined by Raman shifts. The carrier type of all SnS films was identified as p-type using Hall measurement, and the changing carrier concentration, mobility, and resistivity values of the films were investigated depending on annealing conditions. The p-type SnS film can be used as an alternative material for the absorber layer in p-n heterojunction solar cell applications.

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The Zinc Sulfide (ZnS) thin films were produced at 60 ºC on glass slides with the chemical bath deposition (CBD) method. The ZnS films were annealed for 1 hour at different temperatures in the air atmosphere. UV-visible spectrophotometer, X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), four-point probe technique and Hall-effect measurement techniques were used to examine the thermal annealing's effect on the films' optical, structural, and electrical properties. It was observed that with increased annealing temperature, the film thickness increased and thus the energy band gap decreased. It was seen that the particle size of the ZnS films grew depending on the annealing temperature, and the crystal structure turned into an amorphous structure. Finally, it was determined that with the impact of annealing the carrier type did not change, and the conductivity of the ZnS thin films increased.

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This paper focuses on the structural, morphological, and optical properties of the CdS thin films on the glass substrate with the effect of annealing. Chemical bath deposition (CBD) is a basic technique that is used in this work to form CdS thin films. The films' (d) thickness is calculated to be 400 nm. According to the XRD results, the particle sizes for the as-deposited and the annealed CdS film are 15.15 nm and 16.56 nm, respectively. The SEM images of formed nanowalls in the films were compared for both the as-deposited and the annealed CdS structure. It was attained with the Raman spectroscopy analysis that as-deposited and annealed films include the LO phonon modes of the CdS. Moreover, FT-IR analysis was performed to determine the hydroxide ion (OH-) behavior depending on the annealing effect. The optical band gap energy of the annealed CdS nanowalls reduced from 2.31 eV to 2.19 eV, according to the UV measurements. Additionally, the Hall Effect is used to assess the conductivity and resistivity of as-deposited and annealed films. This work demonstrated that CdS films readily form nanowalls at 85 °C.