Effects of annealing on ZnS films produced by CBD method

Abstract

The Zinc Sulfide (ZnS) thin films were produced at 60 ºC on glass slides with the chemical bath deposition (CBD) method. The ZnS films were annealed for 1 hour at different temperatures in the air atmosphere. UV-visible spectrophotometer, X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), four-point probe technique and Hall-effect measurement techniques were used to examine the thermal annealing's effect on the films' optical, structural, and electrical properties. It was observed that with increased annealing temperature, the film thickness increased and thus the energy band gap decreased. It was seen that the particle size of the ZnS films grew depending on the annealing temperature, and the crystal structure turned into an amorphous structure. Finally, it was determined that with the impact of annealing the carrier type did not change, and the conductivity of the ZnS thin films increased.

Photoelectrochemical Properties and Characterization of CdS/CdSe Heterojunctions Obtained by CBD on ITO and p–Si Substrates

“…[13][14][15] Higher quality films can be produced with this method, which depends on slowing down the reaction in the solution, since the pH, concentration, deposition temperature, and time of the solution can be controlled. We have employed the CBD technique in our lab to produce thin films of CdS, [16] CdSe, [17] ZnS, [18] ZnSe, [19] SnS, [20] and CdS/CdSe. [10] Moreover, CdSe was obtained as a nanowire (NW) structure using the CBD method on various substrates.…”