LEED and AES of stoichiometric and arsenic-rich GaAs(110) surfaces prepared by molecular beam epitaxy

Kubler, B.; Ranke, Wolfgang; Jacobi, K.

doi:10.1016/0039-6028(80)90220-4

Cited by 38 publications

(11 citation statements)

References 13 publications

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“…Until this work, all published MBE (110) GaAs/GaAs growths have shown highly defective surfaces with poor optical and electrical device behavior [6][7][8][9]. Wood et al found that the epitaxial behavior of the hi ghly faceted (110) face changed from n-type to p-type above a growth temperature above 550·C.…”

Section: Introductionmentioning

confidence: 99%

Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

Allen

Weber

Washburn

et al. 1987

Applied Physics Letters

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Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature electron mobility of ∼5700 cm2/V s for NSi∼4×1015 and a strong exciton photoluminescence emission at 4 K. This breakthrough in MBE growth of III-V compounds allows for fabrication of (110) GaAs devices which will take advantage of the unique properties of this orientation.

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Section: Introductionmentioning

confidence: 99%

Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

Allen

Weber

Washburn

et al. 1987

Applied Physics Letters

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“…By contrast, the As surface atoms do not relax significantly, staying practically in the same plane. 23 The side view of the Asterminated GaAs (110) structure is depicted in Figure 2(c). This structure exists in thermodynamical equilibrium under As-stabilized conditions 24 and has an associated surface energy of 45 meV/Å 2 , according to calculations by Moll and co-workers.…”

Section: Resultsmentioning

confidence: 99%

Modified energetics and growth kinetics on H-terminated GaAs (110)

Galiana

Benedicto

Díez-Merino

et al. 2013

The Journal of Chemical Physics

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Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV∕Å(2) measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

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“…20,21 A structural analysis conducted with low energy electron diffraction reported that a GaAs(110)-(1Â1) surface grown by MBE exhibits a chevron structure. 22 However, such in situ structural analyses on MBE-grown III-V(110)-(1Â1) are very limited, compared to systematic researches on a variety of III-V(110)-(1Â1) surfaces prepared by cleaving techniques. 1 Because cleaving can create a surface structure that cannot be produced by crystal growth techniques, 23 arrangements of MBE-grown III-V(110)-(1Â1) surfaces need to be further examined experimentally.…”

Section: Introductionmentioning

confidence: 99%