Direct imaging of InSb (110)-(1×1) surface grown by molecular beam epitaxy

Mıshıma, Tetsuya D.

doi:10.1063/1.3647580

Journal of Applied Physics

2011

DOI: 10.1063/1.3647580

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Direct imaging of InSb (110)-(1×1) surface grown by molecular beam epitaxy

Tetsuya D. Mıshıma

Abstract: Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7-4.9 μm infrared materials

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Direct imaging of InSb (110)-(1×1) surface grown by molecular beam epitaxy

Abstract: Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7-4.9 μm infrared materials

Cited by 0 publications

References 50 publications

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