Layer-resolved conductivities in multilayer graphene

Abstract

We study interlayer transport of multilayer graphenes in magnetic field with various stacking structures (AB, ABC, and AA types) by calculating the Hall and longitudinal conductivities as functions of Fermi energy. Their behavior depends strongly on the stacking structures and selection of the layers. The Hall conductivity between different layers is no longer quantized. Moreover, for AB stacking, the interlayer conductivity vanishes around zero energy with increasing layer separation, and shows negative values in particular cases. The fact that longitudinal interlayer conductivity suppressed by the magnetic field indicates that this system can be applied as a switching device.

Stacking order, interaction, and weak surface magnetism in layered graphene sheets

“…In the past several years, the rapid development in preparing few layer graphene samples has promoted great theoretical [1][2][3][4][5][6][7][8][9][10][11][12][13] and experimental [14][15][16][17][18][19][20][21][22] interests in such novel quasi-two-dimensional electron systems. The few layer graphene may be a platform for many new physics issues and is of potential application in electronics.…”

Probing the Mechanism for Bipolar Resistive Switching in Annealed Graphene Oxide Thin Films

“…The carbon electronics, an emerging technology, with high-density device integration capabilities promises to overcome the inherent technical issues related to miniaturization of Si technology. , Recent discovery of the two-dimensional (2D) allotrope of carbon, that is, graphene and its derivatives graphene oxide (GO) and reduced graphene oxide (RGO), has emerged as potential low-dimensional materials with promising electronic − and optical , properties. The easy processing for the formation of ultrathin and robust film makes graphene derivatives the interesting materials for minuscule electronic devices including RRAM. , The presence of various electron-withdrawing and electron-donating functional groups (−COOH, −OH, and >CO) and defect sites in the 2D carbon network of GO and RGO plays a crucial role in defining the electronic transport properties of the materials and supports the development of devices controlled by transportation of electrons in a single GO/RGO sheet and through thin layers containing stacks of GO/RGO sheets …”

“…21,22 The presence of various electronwithdrawing and electron-donating functional groups (−COOH, −OH, and >CO) and defect sites in the 2D carbon network of GO and RGO plays a crucial role in defining the electronic transport properties of the materials and supports the development of devices controlled by transportation of electrons in a single GO/RGO sheet 23 and through thin layers containing stacks of GO/RGO sheets. 24 The unipolar and bipolar resistive switching (RS) behavior in GO have been demonstrated for two terminal M 2 /GO/M 1 device structures with various electrode (M 1 and M 2 ) configurations and using GO synthesized by adopting different recipes. The available reports describing the switching mechanism are inadequate for understanding the origin of switching phenomena and exact electronic charge transport mechanism in metal (M 2 )/GO/metal (M 1 ) structures 25−34 and are still debatable in the scientific and research community.…”

A disorder induced field effect transistor in bilayer and trilayer graphene

“…Our FET proposal occurs in the context of an already rich theoretical literature about conduction in disordered bilayer and multilayer graphene [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46]. Various previous works have examined many different types of disorder, calculated the density of states and the scattering length, included screening effects and paid careful attention to the dependence of the conductance on the electron density at both high and low densities.…”