A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated.Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ∼ 85% while ohmic contact GaN photodetector with identical device structure exhibits only ∼5.3% photosensivity at 350 nm illumination (18 µW/cm 2 ). The responsivity and detectivity of the hybrid device were found to be 1.54 mA/W and 1.45×10 10 Jones (cm Hz ½ W −1 ), respectively at zero bias with fast response (60 ms), recovery time (267 ms) and excellent repeatability. Power density-dependent responsivity & detectivity revealed ultrasensitive behaviour under low light conditions. The source of observed self-powered effect in hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface.The tremendous progress in gallium nitride (GaN) based light emitting diodes (LEDs), 1 laser diodes 2 , and other GaN based devices, namely, UV photodetector (PD) has attracted a great deal of interest from research community. 3 Being chemically inert and thermally stable, they are the most suitable for applications such as flame detection, secure space communication and ozone layer monitoring. 4,5 To match the requirements for such applications in remote and extreme environment, it is highly desirable for the UV devices to be ultrasensitive, with fast response and operate in self-powered mode. However, inherent high defect density associated with as-grown epitaxial GaN films limits its performance. 6The various schemes of metal-semiconductor (M-S) interfaces have been used to improve the UV-PDs device performance. The use of two different metal electrodes on n-GaN with modulating Schottky barrier height leads to a fast response speed but limited reverse saturation current density. 7 Earlier study has shown Schottky contact photodiode of Ni/GaN/Au with asymmetric interdigitated finger electrodes having a responsivity of 5 mA/W in self-powered mode at UV illumination. 8 Recently, Sun et al. have reported a high responsivity of 104 mA/W at zero bias voltage of interdigitated Schottky contact photodiode of Ni (80 nm) /GaN/Ti (20 nm) /Al (60 nm) device. 9 On the other hand, the use of highly transparent conductive electrodes (TCE) such as indium-tin-19 W. S. Hummers and R. E. Offeman, J. Am. Chem. Soc. 80, 1339 (1958).

Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) photodetector. The UV detector fabricated on a bare GaN-NT array yielded highly sensitive and repeatable device characteristics attributed by high responsivity (R), low noise equivalent power (NEP), and a high external quantum efficiency (EQE) of 484.77 A/W, 1.76 × 10 −13 W.Hz -1/2 , and 1.85 × 10 5 %, respectively. Furthermore, the developed UV photodetector demonstrated fast response with excellent stability when functionalized with Au nanoparticles and ZnO nanorods. This hybridized GaN-NT-based device with ZnO nanorods and Au nanoparticles significantly accelerated the performance of the device where a prominent threeorder reduction under dark current is observed along with gigantic R, lower NEP, and an extremely enhanced EQE of 7042 A/W, 1.84 × 10 −14 W.Hz -1/2 , and 2.7 × 10 6 %, respectively. The mechanism elaborating the enhanced device performance with a localized surface plasmon effect has been discussed through an energy band diagram. The fabricated highly sensitive device can lead the path toward future optoelectronic applications of integrated III-nitride technology.

The nanoplasmonic impact of chemically synthesized Au nanoparticles (Au NPs) on the performance of GaN nanostructure-based ultraviolet (UV) photodetectors is analyzed. The devices with uniformly distributed Au NPs on GaN nanostructures (nanoislands and nanoflowers) prominently respond toward UV illumination (325 nm) in both self-powered as well as photoconductive modes of operation and have shown fast and stable time-correlated response with significant enhancement in the performance parameters. A comprehensive analysis of the device design, laser power, and bias-dependent responsivity and response time is presented. The fabricated Au NP/GaN nanoflower-based device yields the highest photoresponsivity of ∼ 380 mA/W, detectivity of ∼ 1010 jones, reduced noise equivalent power of ∼ 5.5 × 10–13 W Hz–1/2, quantum efficiency of ∼ 145%, and fast response/recovery time of ∼40 ms. The report illustrates the mechanism where light interacts with the chemically synthesized nanoparticles guided by the surface plasmon to effectively enhance the device performance. It is observed that the Au NP-stimulated local surface plasmon resonance effect and reduced channel resistance contribute to the augmented performance of the devices. Further, the decoration of low-dimensional Au NPs on GaN nanostructures acts as a detection enhancer with a fast recovery time and paves the way toward the realization of energy-efficient optoelectronic device applications.

Compact optical detectors with fast binary photoswitching over a broad range of wavelength are essential as an interconnect for any light‐based parallel, real‐time computing. Despite of the tremendous technological advancements yet there is no such single device available that meets the specifications. Here a multifunctional self‐powered high‐speed ultrabroadband (250–1650 nm) photodetector is reported based on graphitic carbon‐nitride (g‐C3N4)/Si hybrid 2D/3D structure. The device shows a novel binary photoswitching (change in current from positive to negative) in response to OFF/ON light illumination at small forward bias (≤0.1 V) covering 250–1350 nm. At zero bias, the device displays an extremely high ON/OFF ratio of ≈1.2 × 105 under 680 nm (49 µW cm−2) illumination. The device also shows an ultrasensitive behavior over the entire operating range at low light illuminations, with highest responsivity (1.2 A W−1), detectivity (2.8 × 1014 Jones), and external quantum efficiency (213%) at 680 nm. The response and recovery speeds are typically 0.23 and 0.60 ms, respectively, under 288 Hz light switching frequency. Dramatically improved performance of the device is attributed to the heterojunctions formed by the ultrathin g‐C3N4 nanosheets embedded in the Si surface.