A disorder induced field effect transistor in bilayer and trilayer graphene

Xu, Dongwei; Liu, Haiwen; Sacksteder, Vincent; Song, Juntao; Jiang, Hua; Sun, Qing-Feng; Xie, Xin

doi:10.1088/0953-8984/25/10/105303

Cited by 6 publications

(6 citation statements)

References 66 publications

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“…A recent work proposed such bi-or trilayers as field effect transistors, whereby a gate potential controls the degree of disorder sensed by the electrons in the bilayer. 2 Similar questions arise in the problem of energy or matter localization in few-or even many-body problems, where a multitude of propagation channels may exist to transport particles or energy from one place in the system to another. For example, energy may be transported in small, nearly independent units in the form of quasiparticles, or it may have a propagation channel in which a larger amount of energy is propagating in the form of blobs of several quasiparticle-like excitations that form sorts of bound states.…”

Section: Introductionmentioning

confidence: 95%

Localization in coupled heterogeneously disordered transport channels on the Bethe lattice

Xie

Müller

2013

Phys. Rev. B

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We study the Anderson localization in systems, in which transport channels with rather different properties are coupled together. This problem arises naturally in systems of hybrid particles, such as exciton-polaritons, where it is not obvious which transport channel dominates the coupled system. Here we address the question of whether the coupling between a strongly and a weakly disordered channel will result in localized (insulating) or delocalized (metallic) behavior. Complementing an earlier study in 1D [H. Y. Xie, V. E. Kravtsov, and M. Müller, Phys. Rev. B 86 014205 (2012)], the problem is solved here on a bilayer Bethe lattice with parametrically different parameters. The comparison with the analytical solution in 1D shows that dimensionality plays a crucial role. In D = 1 localization is in general dominated by the dirtier channel, which sets the backscattering rate. In contrast, on the Bethe lattice a delocalized channel remains almost always delocalized, even when coupled to strongly localized channels. We conjecture that this phenomenology holds true for finite dimensions D > 2 as well. Possible implications for interacting many-body systems are discussed.

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Section: Introductionmentioning

confidence: 95%

Localization in coupled heterogeneously disordered transport channels on the Bethe lattice

Xie

Müller

2013

Phys. Rev. B

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“…The unique properties of G LR under U can be briefly explained, following Ref. [36]. In low energy regime, the wavefunction of bulk state in bilayer graphene is expressed as spinor [ϕ B , ϕ T ] T , where ϕ B (ϕ T ) represents the amplitude in the bottom (top) layer.…”

Section: Numerical Results Without Magnetic Fieldmentioning

confidence: 99%

“…The presence of U breaks the equal amplitudes of the wavefunction (|ϕ B | = |ϕ T |), and leads to the redistribution of the carriers in the bilayer graphene. [36] For…”

Section: Numerical Results Without Magnetic Fieldmentioning

confidence: 99%

Transport properties in monolayer–bilayer–monolayer graphene planar junctions

et al. 2017

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The transport study of graphene based junctions has become one of the focuses in graphene research. There are two stacking configurations for monolayer-bilayer-monolayer graphene planar junctions. One is the two monolayer graphene contacting the same side of the bilayer graphene, and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene. In this paper, according to the Landauer-Büttiker formula, we study the transport properties of these two configurations. The influences of the local gate potential in each part, the bias potential in bilayer graphene, the disorder and external magnetic field on conductance are obtained. We find the conductances of the two configurations can be manipulated by all of these effects. Especially, one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene. The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.

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“…A remarkable property of BLG-which potentiates its use in future graphene based electronics-is the possibility of opening and controlling a band gap with a potential difference applied between top and bottom layers (biased bilayer) [8,[12][13][14][15][16][17]. The externally applied perpendicular electric field breaks the inversion symmetry of the system [18] allowing to define a layer pseudospin, at least for energies below the interlayer coupling energy [5,9,19].…”

Section: Introductionmentioning

confidence: 99%

Current flow in biased bilayer graphene: Role of sublattices

2014

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We investigate here how the current flows over a bilayer graphene in the presence of an external electric field perpendicularly applied (biased bilayer). Charge density polarization between layers in these systems is known to create a layer pseudospin, which can be manipulated by the electric field. Our results show that current does not necessarily flow over regions of the system with higher charge density. Charge can be predominantly concentrated over one layer, while current flows over the other layer. We find that this phenomenon occurs when the charge density becomes highly concentrated over only one of the sublattices, as the electric field breaks layer and sublattice symmetries for a Bernal-stacked bilayer. For bilayer nanoribbons, the situation is even more complex, with a competition between edge and bulk effects for the definition of the current flow. We show that, in spite of not flowing trough the layer where charge is polarized to, the current in these systems also defines a controllable layer pseudospin.

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A disorder induced field effect transistor in bilayer and trilayer graphene

Cited by 6 publications

References 66 publications

Localization in coupled heterogeneously disordered transport channels on the Bethe lattice

Localization in coupled heterogeneously disordered transport channels on the Bethe lattice

Transport properties in monolayer–bilayer–monolayer graphene planar junctions

Current flow in biased bilayer graphene: Role of sublattices

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