Probing the Mechanism for Bipolar Resistive Switching in Annealed Graphene Oxide Thin Films

Saini, Pooja; Singh, Manjri; Thakur, Jyoti; Patil, Ranjit A.; Ron, Yuan; Tandon, R. P.; Singh, Surinder P.; Mahapatro, Ajit K.

doi:10.1021/acsami.7b09447

Cited by 23 publications

(11 citation statements)

References 71 publications

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“…Table compares the power consumption of our device and previous reported GO-based resistive memory devices. It is noteworthy that the device in this work has the lowest set power. ,,− …”

Section: Resultsmentioning

confidence: 86%

Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

Wang

Yin

Song

et al. 2020

ACS Appl. Mater. Interfaces

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Suppressing the operating current in resistive memory devices is an effective strategy to minimize their power consumption. Herein, we present an intrinsic low-current memory based on two-dimensional (2D) hybrid heterostructures consisting of partly reduced graphene oxide (p-rGO) and conjugated microporous polymer (CMP) with the merits of being solution-processed, large-scale, and well patterned. The device with the heterostructure of p-rGO/CMP sandwiched between highly reduced graphene oxide (h-rGO) and aluminum electrodes exhibited rewritable and nonvolatile memory behavior with an ultralow operating current (∼1 μA) and efficient power consumption (∼2.9 μW). Moreover, the on/off current ratio is over 103, and the retention time is up to 8 × 103 s, indicating the low misreading rate and high stability of data storage. So far, the value of power is about 10 times lower than those of the previous GO-based memories. The bilayer architecture provides a promising approach to construct intrinsic low-power resistive memory devices.

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“…Table compares the power consumption of our device and previous reported GO-based resistive memory devices. It is noteworthy that the device in this work has the lowest set power. ,,− …”

Section: Resultsmentioning

confidence: 86%

Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

Wang

Yin

Song

et al. 2020

ACS Appl. Mater. Interfaces

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“…However, their high‐resistance state (HRS) to low‐resistance state (LRS) ratios (ON/OFF ratios) reported in the literature are lower than 10 4 . [ 12–14 ] This limits their use in large‐capacity and low‐power‐consumption storage, which is urgently needed with the development of the Internet of things and big‐data processing. Metal halide perovskites are proven to have high photoelectric and flexible properties, [ 15 ] which enable them good candidates for photoelectric dual‐control RRAM devices with low power consumption and secure data storage.…”

Section: Introductionmentioning

confidence: 99%

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Liu

Ren

et al. 2022

Adv Funct Materials

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Perovskite resistive random-access memory (RRAM) is a promising candidate for next-generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low-cost fabrication, and good photoelectric regulation performance. In this work, a flexible transparent CsPbBr 3 quantum dots (QDs) mixed in graphene oxide (GO) RRAM device is introduced, which is controllable by both an electric field and illumination. Under illumination, the ON/OFF ratio of the Ag/CsPbBr 3 QDs:GO/ITO device is ≈1.4 × 10 7 , which is 1077 times larger than that in the dark condition (1.3 × 10 4 ). The SET/RESET voltages are +2.28/−2.04 V and +1.68/−1.08 V under the dark and illumination conditions, respectively. As a flexible memory device, the resistances are little affected by the bending curvatures and load-cycling. Before and after 10 4 bending cycles with a radius of 5 mm under illumination, the ON/OFF ratios keep in the same order, which are 2.5 × 10 7 and 2.3 × 10 7 , respectively. The ratio values are 8.8 × 10 4 and 2.9 × 10 4 under the dark condition, respectively. This innovative resistive memory based on the CsPbBr 3 QDs:GO hybrid film supports a huge space for the development of photoelectrical dual-controlled flexible RRAM devices.

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“…And the resistance of the rGO electrode is decreased by reducing the oxygen vacancy concentration, inducing the reset and transition back to the HRS. Electrical pulses can cyclically induce an HRS to LRS transition [56]. The realization of ultra-low energy consumption is also of great significance to the development of NC systems.…”

Section: Resultsmentioning

confidence: 99%

Direct laser writing of graphene oxide for ultra-low power consumption memristors in reservoir computing for digital recognition

Chen¹,

Zhang²,

Dong³

et al. 2022

NSO

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A memristor is a promising candidate of new electronic synaptic devices for neuromorphic computing. However, conventional memristors often exhibit complex device structures, cumbersome manufacturing processes, and high energy consumption. Graphene-based materials show great potential as the building materials of memristors. With direct laser writing technology, this paper proposes a lateral memristor with reduced graphene oxide (rGO) and Pt as electrodes and graphene oxide (GO) as function material. This Pt/GO/rGO memristor with a facile lateral structure can be easily fabricated and demonstrates an ultra-low energy consumption of 200 nW. Typical synaptic behaviors are successfully emulated. Meanwhile, the Pt/GO/rGO memristor array is applied in the reservoir computing network, performing the digital recognition with a high accuracy of 95.74%. This work provides a simple and low-cost preparation method for the massive production of artificial synapses with low energy consumption, which will greatly facilitate the development of neural network computing hardware platforms.

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Probing the Mechanism for Bipolar Resistive Switching in Annealed Graphene Oxide Thin Films

Cited by 23 publications

References 71 publications

Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Direct laser writing of graphene oxide for ultra-low power consumption memristors in reservoir computing for digital recognition

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