Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

Abstract

Suppressing the operating current in resistive memory devices is an effective strategy to minimize their power consumption. Herein, we present an intrinsic low-current memory based on two-dimensional (2D) hybrid heterostructures consisting of partly reduced graphene oxide (p-rGO) and conjugated microporous polymer (CMP) with the merits of being solution-processed, large-scale, and well patterned. The device with the heterostructure of p-rGO/CMP sandwiched between highly reduced graphene oxide (h-rGO) and aluminum electrodes exhibited rewritable and nonvolatile memory behavior with an ultralow operating current (∼1 μA) and efficient power consumption (∼2.9 μW). Moreover, the on/off current ratio is over 103, and the retention time is up to 8 × 103 s, indicating the low misreading rate and high stability of data storage. So far, the value of power is about 10 times lower than those of the previous GO-based memories. The bilayer architecture provides a promising approach to construct intrinsic low-power resistive memory devices.

High‐Performance Memristor Based on 2D Layered BiOI Nanosheet for Low‐Power Artificial Optoelectronic Synapses

“…Table 1 shows the comparison of the RS performance, including SET and RESET voltages, ON/OFF ratio, retention time and endurance cycle between our device with other 2D materials‐based memristors. [ 21–37 ] It indicates that our device not only possesses relatively high ON/OFF ratio, but also ultralow SET and RESET voltages when compared with previously published works. Inspiringly, the obtained ultralow SET voltage is one order of magnitude lower than that of most reported memristors based on 2D materials.…”

“…Very recently, ultralow stand‐by power consumption of 5 fW was achieved in 2D layered black phosphorous (BP) nanosheet for memristive devices. [ 33 ] In our experiments, the memristor exhibits low power consumption in the range of <10 pW which is lower than that of most 2D materials‐based memristors, [ 28,29,36,37 ] suggesting promising low‐power applications. Furthermore, we used voltage pulse with pulse width of 1 ms and pulse amplitude of ±1 V to examine the SET and RESET speeds of device.…”

“…The memristor with vertical structure is demonstrated in Process I. When Ag electrode is positively [21] Ag/h-BN/Cu 0.72 −0.37 10 2 3 × 10 3 550 n 2016 [22] Ag/BNO x /graphene 0.7 −0.2 10 3 1.4 × 10 4 100 n 2017 [23] Graphene/MoS 2−x O x / graphene 1.1 −1.5 10 10 5 2 × 10 7 n 2018 [24] Au/Cr/MoS 2 /Cr/Au 1.4 −0.7 10 3 10 4 20 n 2018 [25] Ag/h-BN/graphene 5.2 −4 10 3 n 40 n 2019 [26] Cu/MoS 2 /Au 0.25 −0.15 4 1.8 × 10 3 20 n 2019 [27] Ag/MoS 2 /Pt 0.8 −0.6 10 3 10 5 10 6 7.35 nW 2020 [28] h-rGO/2D CMP/p-rGO/Al 2.9 −2.2 10 3 8 × 10 3 n 2.9 µW 2020 [29] Ti/h-BN/Cu 2.7 −0.86 10 9 10 4 1500 n 2020 [30] Au/Ag/MoS 2 /Si 0.4 −0.3 10 2 2 × 10 4 10 4 n 2020 [31] Ti/PdSe 2 /Au 0.73 −2 10 4 10 6 100 n 2021 [32] Ag/BP/ITO 0.39 −0.37 10 7 10 5 10 4 5 fW 2021 [33] Ti/HfSe x O y /HfSe 2 /Au 2.32 −2.5 10 3 1.5 × 10 4 40 n 2021 [34] Au/Ti/HfSe 2 /Ti/Au/Ti 0.74 −0.81 10 2 10 4 500 n 2021 [35] Au/Ni/MoO x /Mo 2 C/Ni/Au 0.5 −0.3 10 2 n 120 50 nW 2021 [36] Au/Cr/CuSe/Cr/Au 0.4 −0.4 10 2 10 4 300 11.4 µW 2022 [37] Ag/BiOI/Pt 0.05 −0.05 biased during the forming process, oxidized Ag + ions formed at the Ag electrode migrate to the Pt electrode, where Ag + ions are reduced to Ag atoms and then accumulated to grow Ag CFs (Process II), corresponding to the electroforming process. After electroforming, the device is switched from the HRS to the LRS, Ag conductive channel can be formed (Process III).…”

Graphene Oxide Thin Films for Nonlinear Integrated Photonics<strong> </strong>

“…Due to the ease of fabrication and high flexibility for changing its properties, GO offers vast possibilities for implementing heterostructures based on different materials. Currently, some heterostrucincluding GO or rGO have been investigated, e.g., polymer / GO heterostructure [213] , titanium carbide / rGO heterostructure [214] , and vanadium pentoxide / rGO heterostructure [215] . However, the optical nonlinearity of GO or rGO heterostructures, particularly in the form of integrated devices, are yet to be investigated, hinting at more significant breakthroughs to come.…”

Graphene oxide2D thin films for high performance nonlinear integrated photonics

“…Due to the ease of fabrication and high flexibility for changing its properties, GO offers vast possibilities for implementing heterostructures based on different materials. Currently, some heterostructures including GO or rGO have been investigated, e.g., polymer / GO heterostructure [213] , titanium carbide / rGO heterostructure [214] , and vanadium pentoxide / rGO heterostructure [215] . However, the optical nonlinearity of GO or rGO heterostructures, particularly in the form of integrated devices, are yet to be investigated, hinting at more significant breakthroughs to come.…”