Layer-By-Layer Growth for Pulsed Laser Deposition

Hinnemann, Berit; Westerhoff, F.; Wolf, Dietrich E.

doi:10.1080/01411590290023049

Cited by 6 publications

(4 citation statements)

References 16 publications

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“…Pulsed plasma/laser depositions are potential ways to suppress the observed roughening during continuous dc magnetron sputtering. 19,20 Intense pulses would dramatically reduce the flux crossing the step edges, which is the source of the instability. The high density of atoms deposited in the pulse would have low surface diffusion mobility, with atoms essentially "sticking where they land."…”

Section: Thickness [Nm] Stress-thickness [Gpa-nm]mentioning

confidence: 99%

Understanding the relation between stress and surface morphology in sputtered films: Atomistic simulations and experiments

Zepeda-Ruiz

Chason

Gilmer

et al. 2009

Applied Physics Letters

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Articles you may be interested inSuccessful fabrication of high K u columnar CoPt-SiO2 granular film sputtered under high substrate temperature J. Appl. Phys. 115, 17B752 (2014); 10.1063/1.4869164Unstable kinetic roughening during the island coalescence stage of sputtered tantalum films Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering

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Section: Thickness [Nm] Stress-thickness [Gpa-nm]mentioning

confidence: 99%

Understanding the relation between stress and surface morphology in sputtered films: Atomistic simulations and experiments

Zepeda-Ruiz

Chason

Gilmer

et al. 2009

Applied Physics Letters

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“…Recently, Hinneman and co-workers 7,8 proposed a simple model for PLD. In this model the duration of a pulse is assumed to be zero and the transient enhancement of the mobility of freshly deposited atoms is neglected.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of pulsed laser deposition

2002

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Using the Monte Carlo method, we have studied the pulsed laser deposition process at the submonolayer regime. In our simulations, dissociation of an atom from a cluster is incorporated. Our results indicate that the pulsed laser deposition resembles molecular-beam epitaxy at very low intensity, and that it is characteristically different from molecular-beam epitaxy at higher intensity. We have also obtained the island size distributions. The scaling function for the island size distribution for pulsed laser deposition is different from that of molecular-beam epitaxy.

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“…19,20 These results seem to indicate that compressive strain inhibits exchange diffusion at the edges, thus increasing the magnitude of ES barrier and promoting 3D island formation as a result. Conversely, tensile strain decreases the ES barrier, resulting in layer-by-layer 2D crystal formation.…”

mentioning

confidence: 88%

Strain dependent facet stabilization in selective-area heteroepitaxial growth of GaN nanostructures

Grandusky

Alizadeh

Keimel

et al. 2005

Applied Physics Letters

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We report on the selective-area heteroepitaxy and facet evolution of submicron GaN islands on GaN-sapphire, AlN-sapphire, and bare sapphire substrates. It is shown that strain due to the lattice mismatch between GaN and the underlying substrate has a significant influence on the final morphology and faceting of submicron islands. Under identical metalorganic chemical vapor deposition growth parameters, islands with low or no mismatch strain exhibit pyramidal morphologies, while highly strained islands evolve into prismatic shapes. Furthermore, islands grown with relatively low compressive mismatch strain yield more uniform arrays of pyramids as compared to the nonstrained, homoepitaxially grown crystals. It is proposed that the strain dependency of Ehrlich-Schwoebel barriers across different crystallographic planes could potentially account for the observed morphologies during selective area growth of GaN islands.

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Layer-By-Layer Growth for Pulsed Laser Deposition

Cited by 6 publications

References 16 publications

Understanding the relation between stress and surface morphology in sputtered films: Atomistic simulations and experiments

Understanding the relation between stress and surface morphology in sputtered films: Atomistic simulations and experiments

Monte Carlo simulation of pulsed laser deposition

Strain dependent facet stabilization in selective-area heteroepitaxial growth of GaN nanostructures

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