Law 19: The ultimate photodiode performance metric

Lee, Donald L.; Dreiske, P.; Ellsworth, J.; Cottier, Ryan; Chen, Annie; Tallaricao, Stephanie; Yulius, A.; Carmody, M.; Piquette, E. C.; Zandian, Majid; Douglas, Sheri

doi:10.1117/12.2564902

Cited by 34 publications

(74 citation statements)

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“…Gravrand et al [24] published that for most tested MWIR photodiodes from CEA Leti and Lynred by Sofradir & Ulis, the estimated SRH carrier lifetimes [from direct measurements (photoconductive or photoluminescence decay) and indirect estimates from current-voltage (I-V) characteristics], are in the range between 10 and 100 µs. Those values are lower than the earlier assessed by US research groups [25]. However, they were estimated for devices with higher doping level in absorber >10 14 cm −3 .…”

Section: Srh Carrier Lifetimecontrasting

confidence: 60%

Trends in Performance Limits of the HOT Infrared Photodetectors

et al. 2021

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The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots.

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Section: Srh Carrier Lifetimecontrasting

confidence: 60%

Trends in Performance Limits of the HOT Infrared Photodetectors

et al. 2021

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“…Nowadays, HgCdTe is the most common material for IR photodetectors being the reference for alternative technologies to include uncooled operation. After sixty years of development, HgCdTe has just reached ultimate HOT performance limit estimated by “Law 19”-the ultimate photodiode performance metric [ 117 ]. This metric has been recently supported by experimental data of fully-depleted HgCdTe P-i-N photodiodes.…”

Section: Discussionmentioning

confidence: 99%

“…In Extended Abstracts of The 2019 U.S. Workshop on the Physics and Chemistry of II-VI Materials [ 132 ], it was suggested to replace “Rule 07” with “Law 19”. The “Law 19” corresponds exactly with the BLIP curve for room temperature [ 117 ]. The internal photodiode current can be several orders of magnitude below “Rule 07” versus λ cut-off and operating temperature.…”

Section: Inassb Bulk Photodiodesmentioning

confidence: 98%

“…Generally, values of τ SRH are approximately more than two orders of magnitude larger for HgCdTe than those reported for the III-V semiconductors with similar bandgaps. At lower temperatures and doping level below 10 14 cm −3 , the HgCdTe P-i-N photodiodes become depletion limited due to SRH centers having lifetimes in the range to 10 ms [ 116 , 117 ]. In consequence, the potential properties of room-temperature HgCdTe photodiodes operating above 3 μm guarantee reaching more than order of magnitude higher detectivity (above 10 10 Jones) in comparison with value predicted by Rule 07 [ 118 ], and this detectivity is limited by the background flux [ 119 ].…”

Section: Properties Of Inas/inassb Superlatticesmentioning

confidence: 99%

“…The Rule 07 coincides well with theoretically predicted curve for Auger-suppressed p-on-n photodiode with electron concentration in active region ~10 15 cm −3 . For sufficiently long SRH carrier lifetime in HgCdTe, which is experimentally supported at doping level below 5 × 10 13 cm −3 , the internal P-i-N HgCdTe photodiode current is suppressed and performance is limited by the background radiation [ 117 ]. In Extended Abstracts of The 2019 U.S. Workshop on the Physics and Chemistry of II-VI Materials [ 132 ], it was suggested to replace “Rule 07” with “Law 19”.…”

Section: Inassb Bulk Photodiodesmentioning

confidence: 99%

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InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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Progress in Quantum Dot Infrared Photodetectors

Rogalski

2021

Quantum Dot Photodetectors

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Law 19: The ultimate photodiode performance metric

Cited by 34 publications

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Trends in Performance Limits of the HOT Infrared Photodetectors

Trends in Performance Limits of the HOT Infrared Photodetectors

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Progress in Quantum Dot Infrared Photodetectors

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