Progress in Quantum Dot Infrared Photodetectors

Rogalski, Antoni

doi:10.1007/978-3-030-74270-6_1

Cited by 5 publications

(3 citation statements)

References 148 publications

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“…Thanks to their cost-effective fabrication, nanocrystals (NCs) 1 have raised interest in the design of optoelectronic devices. This is especially true in the spectral range where silicon cannot be used and for which alternative materials, generally epitaxially grown semiconductors, have to be integrated.…”

Section: ■ Introductionmentioning

confidence: 99%

HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection

Gréboval

Izquierdo

Abadie

et al. 2022

ACS Appl. Nano Mater.

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Thanks to their narrow band gap nature and fairly high carrier mobility, HgTe nanocrystals (NCs) are of utmost interest for optoelectronics beyond the telecom window (λ > 1.55 μm). In particular, they offer an interesting cost-effective alternative to the well-developed InGaAs technology. However, in contrast to PbS, far less work has been dedicated to the integration of this material in photodiodes. In the short-wave infrared region, HgTe NCs have a more p-type character than in the mid-wave infrared region, thus promoting the development of new electron transport layers with an optimized band alignment. As for perovskites, HgTe NCs present a fairly deep band gap with respect to vacuum. Thus, we were motivated by the strategy developed for perovskite solar cells, for which SnO2 has led to the best performing devices. Here, we explore the following stack made of SnO2/HgTe/Ag2Te, in which the SnO2 and Ag2Te layers behave as electron and hole extractors, respectively. Using X-ray photoemission, we show that SnO2 presents a nearly optimal band alignment with HgTe to efficiently filter the hole dark current while letting the photoelectrons flow. The obtained I–V curve exhibits an increased rectifying behavior, and the diode stack presents a high internal efficiency for the diode (above 60%) and an external quantum efficiency that is mostly limited by the absorption magnitude. Furthermore, we tackle a crucial challenge for the transfer of such a diode onto readout circuits, which prevents back-side illumination. We also demonstrate that the diode stack is reversible with a partially transparent conducting electrode on the top, while preserving the device’s responsivity. Finally, we show that such a SnO2 layer is also beneficial for electron injection and leads to an enhanced electroluminescence signal as the diode is operated under forward bias. This work is an essential step toward the design of a focal plane array with a HgTe NC-based photodiode.

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Section: ■ Introductionmentioning

confidence: 99%

HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection

Gréboval

Izquierdo

Abadie

et al. 2022

ACS Appl. Nano Mater.

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“…Efficiency of quantum-well IR photo-detectors (QWIPs) has been surpassed by QD-IR photo-detectors (QDIPs) [99]. Moreover, there are as yet various issues, including deficient quantum execution and the requirement for further developed QDIP engineering and creation to completely use their true capacity in third-age infrared detecting [100]. In the impending years, QDIPs with effectiveness tantamount to present state-of-the-art advancements like QWIPs and HgCdTe photodetector might be utilized [101].…”

Section: Quantum Dots In Optoelectronic Devicesmentioning

confidence: 99%

Application of Quantum Dots in Bio-Sensing, Bio-Imaging, Drug Delivery, Anti-Bacterial Activity, Photo-Thermal, Photo-Dynamic Therapy, and Optoelectronic Devices

Rajamanickam¹

2023

Quantum Dots - Recent Advances, New Perspectives and Contemporary Applications

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Quantum dots (QDs) are of prevalent scientific and technological consideration because of their tunable size and thus frequency change (band-gap energy) in the NIR optical region. QDs have exceptional properties such as optical, physiochemical, electrical, and capacity to be bound to biomolecules. These selective size-dependent attributes of QDs assist them with having versatile applications in optoelectronic and biomedical fields. Their capacity to emit light at various frequencies because of an outer stimulus makes quantum dots perfect for use in imaging, diagnostics, tests for individual particles, and medication transportation frameworks. Ongoing advances in quantum dot design incorporate the potential for these nanocrystals to become therapeutic agents to restore numerous disease conditions themselves via bioconjugation with antibodies or medications. In this chapter, a few advances in the field of biomedical applications, such as bio-sensing, bio-imaging, drug loading capacity, targeted drug delivery, anti-stacking limit hostile to bacterial activity, photo-thermal treatment, photodynamic treatment, and optical properties for biomedical applications are presented, further to a short conversation on difficulties; for example, the biodistribution and harmful toxic effects of quantum dots is also discussed.

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“…Using narrow band gap materials, it is possible to address the infrared (IR) part of the electromagnetic spectrum [ 1 , 2 ]. At such wavelengths, NCs offer an interesting alternative to epitaxially grown semiconductors to design cost-effective devices [ 3 ]. This has led to the demonstration of efficient light-emitting devices [ 4 , 5 , 6 , 7 ] as well as effective light sensors [ 8 , 9 , 10 ], including focal plane arrays used to image near- and mid-IR light [ 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling

et al. 2023

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Nanocrystals’ (NCs) band gap can be easily tuned over the infrared range, making them appealing for the design of cost-effective sensors. Though their growth has reached a high level of maturity, their doping remains a poorly controlled parameter, raising the need for post-synthesis tuning strategies. As a result, phototransistor device geometry offers an interesting alternative to photoconductors, allowing carrier density control. Phototransistors based on NCs that target integrated infrared sensing have to (i) be compatible with low-temperature operation, (ii) avoid liquid handling, and (iii) enable large carrier density tuning. These constraints drive the search for innovative gate technologies beyond traditional dielectric or conventional liquid and ion gel electrolytes. Here, we explore lithium-ion glass gating and apply it to channels made of HgTe narrow band gap NCs. We demonstrate that this all-solid gate strategy is compatible with large capacitance up to 2 µF·cm−2 and can be operated over a broad range of temperatures (130–300 K). Finally, we tackle an issue often faced by NC-based phototransistors:their low absorption; from a metallic grating structure, we combined two resonances and achieved high responsivity (10 A·W−1 or an external quantum efficiency of 500%) over a broadband spectral range.

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Progress in Quantum Dot Infrared Photodetectors

Cited by 5 publications

References 148 publications

HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection

HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection

Application of Quantum Dots in Bio-Sensing, Bio-Imaging, Drug Delivery, Anti-Bacterial Activity, Photo-Thermal, Photo-Dynamic Therapy, and Optoelectronic Devices

Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling

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