Lattice Parameter of Polycrystalline Diamond in the Low-Temperature Range

Abstract

The lattice parameter for polycrystalline diamond is determined as a function of temperature in the 4-300 K temperature range. In the range studied, the lattice parameter, expressed in angstrom units, of the studied sample increases according to the equation a = 3.566810(12) + 6.37(41) × 10 −14 T 4 (approximately, from 3.5668 to 3.5673 Å). This increase is larger than that earlier reported for pure single crystals. The observed dependence and the resulting thermal expansion coefficient are discussed on the basis of literature data reported for diamond single crystals and polycrystals.

Radio-Frequency Sputtering Growth of Indium Nitride Thin Film on Flexible Substrate

“…This may probably due to the higher substrate temperature of 200 °C has led to the changed of energy stored in the intermolecular bonds between the atoms. Considering the thermal expansion coefficient, the lattice constant of the flexible substrate varies with increasing of the substrate temperature [15,16]. Hence, the changing in lattice constant by thermal expansion effect may cause to the possibility for the formation of nanostructure.…”

Diamond / SiC heterojunctions

“…In order to have a useful heterojunction, lattice constants of the two materials must be well matched, as in the case of 4H-SiC [25] and diamond [26], since lattice mismatch can introduce dislocations which result in interface states. In addition, challenges such as difficulty in relating the conduction mechanism to a pre-determined band structure or the causal variety of defect levels present in CVD diamond justify a fundamental study for characterizing the interface behavior and the parameters that affect it.…”