2017
DOI: 10.1016/j.surfcoat.2016.12.066
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Growth mechanism of indium nitride via sol–gel spin coating method and nitridation process

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Cited by 14 publications
(8 citation statements)
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“…The uniform, thin coating layer on the struts of the scaffolds could be attributed to the spin coating process used. During the process, the centrifugal force could help the precursor solution evenly distribute inside the scaffolds and prevent the precursor from clogging [ 36 , 37 ].…”
Section: Discussionmentioning
confidence: 99%
“…The uniform, thin coating layer on the struts of the scaffolds could be attributed to the spin coating process used. During the process, the centrifugal force could help the precursor solution evenly distribute inside the scaffolds and prevent the precursor from clogging [ 36 , 37 ].…”
Section: Discussionmentioning
confidence: 99%
“…Moreover, the released N 2 O 5 gas will decompose gradually into nitrogen dioxide (NO 2 ) gas even at room temperature [22]. The possible reactions for the formation of In 2 O 3 can be expressed as follows [20]: …”
Section: Resultsmentioning
confidence: 99%
“…The as-deposited samples were annealed at 300°C for 2 h under a nitrogen atmosphere to evaporate the solvent and refine the film structure. To transform the films into InN, nitridation was conducted using a custom-made tube furnace system in the presence of ammonia gas, as shown in Figure 1 [20].
Figure 1 Reaction set-up for synthesising InN thin films.
…”
Section: Methodsmentioning
confidence: 99%
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“…Therefore, an alternative growth method which is simpler, safer, and cheaper is highly needed. Recently, we have successfully grown InN [18][19][20] and Mg-doped InN [21][22][23] using sol-gel spin coating technique. This approach allows the growth below the decomposition temperature of the InN (i.e., around 630 C).…”
Section: Introductionmentioning
confidence: 99%