Lattice damage caused by the irradiation of diamond

Campbell, B.; Choudhury, Wahid; Mainwood, Alison; Newton, Mark E.; Davies, Gordon

doi:10.1016/s0168-9002(01)01664-3

Cited by 66 publications

(62 citation statements)

References 16 publications

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“…We think that relaxation processes in Si crystals excited by soft X-rays is one of main reasons of very fast diffusion, or superdiffusivity [10], of vacancies, which has been measured in [17], as well as the electron-hole recombination in Si crystals [18]. However, in the latter work, like in later works [21][22][23], vacancies were obtained by irradiation with 1-3 MeV electrons, gamma rays, or fast neutrons. In our case, we obtained superdiffusion [10] of metastable excited vacancies generated with soft X-rays [2,3] as a consequence of the Auger effect [24].…”

Section: Discussionmentioning

confidence: 95%

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

et al. 2007

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We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.

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Section: Discussionmentioning

confidence: 95%

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

et al. 2007

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“…We think that relaxation processes in Si crystals excited by soft X-rays is one of main reasons of very fast diffusion, or superdiffusivity [10], of vacancies, which has been measured in [18], as well as the electron-hole recombination in Si crystals [19]. However, in the latter work, like in later papers [20][21][22], vacancies were obtained by irradiation with 1-3 MeV electrons, gamma rays or fast neutrons. In our case, we obtained superdiffusion [10] of metastable excited vacancies generated with soft X-rays [2,3] as a consequence of Auger effect [23].…”

Section: Results and Conclusionmentioning

confidence: 99%

Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

2006

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We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.

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“…The energy lost to ionization ͑ionizing energy loss͒ produces damage, too. 16,17 A rough estimation of the number of interstitial atoms ͑i.e., of vacancies͒ formed by radiation per unit volume is obtained by multiplying the amount of the displacement per atom ͑DPA͒ by the atomic number density d ͑ d = 1.76ϫ 10 23 cm −3 in the case of diamond͒…”

Section: A Evaluation Of Radiation Damagementioning

confidence: 99%

“…82, 1174 ͑2007͔͒. However, at the much higher neutron fluence of ϳ2 ϫ 10 16 neutrons/ cm 2 damage is observed. The detector response to 5.5 MeV…”

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confidence: 95%

“…This is why diamond based neutron detectors are currently under test in some of these facilities. In this paper the damaging effects induced in chemical vapor deposition ͑CVD͒ diamond based detectors by a neutron fluence of ϳ2 ϫ 10 16 neutrons/ cm 2 have been studied and significant changes in spectroscopic, electrical, and optical properties have been observed. The detectors are fabricated using high quality synthetic CVD single crystal diamond using the p-type/intrinsic/Schottky metal/ 6 LiF layered structure recently proposed by Marinelli et al ͓Appl.…”

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Characterization of damage induced by heavy neutron irradiation on multilayered L6iF-single crystal chemical vapor deposition diamond detectors

Almaviva

Angelone

Marinelli

et al. 2009

Journal of Applied Physics

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High performance neutron detectors sensitive to both thermal and fast neutrons are of great interest to monitor the high neutron flux produced, e.g., by fission and fusion reactors. An obvious requirement for such an application is neutron irradiation hardness. This is why diamond based neutron detectors are currently under test in some of these facilities. In this paper the damaging effects induced in chemical vapor deposition (CVD) diamond based detectors by a neutron fluence of ∼2×1016 neutrons/cm2 have been studied and significant changes in spectroscopic, electrical, and optical properties have been observed. The detectors are fabricated using high quality synthetic CVD single crystal diamond using the p-type/intrinsic/Schottky metal/L6iF layered structure recently proposed by Marinelli et al. [Appl. Phys. Lett. 89, 143509 (2006)], which allows simultaneous detection of thermal and fast neutrons. Neutron radiation hardness up to at least 2×1014 n/cm2 fast (14 MeV) neutron fluence has been confirmed so far [see Pillon et al., (Fusion Eng. Des. 82, 1174 (2007)]. However, at the much higher neutron fluence of ∼2×1016 neutrons/cm2 damage is observed. The detector response to 5.5 MeV A241m α-particles still shows a well resolved α-peak, thus confirming the good radiation hardness of the device but a remarkable degradation and a significant instability with time of charge collection efficiency and energy resolution arise. Symmetric, nearly Ohmic I-V (current-voltage) characteristics have been recorded from the metal/intrinsic/p-doped diamond layered structure, which before neutron irradiation acted as a Schottky barrier diode with a strong rectifying behavior. The nature and the distribution of the radiation induced damage have been deeply examined by means of cathodoluminescence spectroscopy. A more heavily damaged area into the intrinsic diamond at the same position and with the same extension of the L6iF layer has been found, the increased damage being ascribed to the highly ionizing particles produced in the L6iF layer by thermal neutrons through the nuclear reaction L6i(n,α)T.

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Lattice damage caused by the irradiation of diamond

Cited by 66 publications

References 16 publications

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

Characterization of damage induced by heavy neutron irradiation on multilayered L6iF-single crystal chemical vapor deposition diamond detectors

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