Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

Janavičius, A.J.; Purlys, R.; Norgėla, Žilvinas

doi:10.12693/aphyspola.109.159

Cited by 2 publications

(2 citation statements)

References 18 publications

(32 reference statements)

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“…For displacement into interstitial state they must penetrate through an additional barrier 0.5 eV [7]. The superdiffusion of irradiated vacancies is a result of electrons transitions between conductivity band, valence band and vacancies, and it is also influenced by local lattice vibrations [8]. The local heating of atoms surrounding the excited vacancies can increase local temperature up to 1300 K [6].…”

Section: Introductionmentioning

confidence: 99%

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

et al. 2008

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We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated by soft X-rays was obtained experimentally. In this work, we presented experimentally obtained diffusion coefficients of singly and doubly negatively charged long-lived excited vacancies. These high concentration charged metastable vacancies (about 10 13 cm −3 ) at room temperature can very fast diffuse changing electrical conductivity and the Hall mobility of carriers. We measured the superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, which were not affected by X-rays. In this paper, we presented the obtained superdiffusion profiles of boron and phosphorus in crystalline silicon measured with secondary-ion mass spectrometer.

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Section: Introductionmentioning

confidence: 99%

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

et al. 2008

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“…For displacement into interstitial state they must penetrate through additional * corresponding author (505) barrier 0.5 eV [3]. The irradiated vacancies superdiffusion is a result of the interaction between electrons transitions and the local lattice vibrations [4]. The local heating of atoms surrounding the excited vacancies can increase local temperature till 1300 K [2].…”

Section: Introductionmentioning

confidence: 99%

Fast Diffusion of Metastable Vacancies in Surface of Excited Si Crystals

Janavičius

Turskienė

2006

Acta Phys. Pol. A

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We considered the practically interesting, very fast nonlinear diffusion of metastable vacancies in the surface of Si crystal, excited by soft X-rays. Here we used experimentally defined diffusion coefficients of singly and doubly negatively charged very fast vacancies generated by soft X-rays. These high concentration (about 10 13 cm −3 ) metastable vacancies at room temperature can diffuse and exist in the crystal for a very long time (about 24 hours for not so fast neutral vacancies) changing electrical conductivity, the Hall mobility of carriers and generating some resonance phenomena in the lattice of Si crystal. We measured superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, where X-rays did not acted. In the paper we modified the formerly obtained analytical solution of nonlinear diffusion equation for calculation of distribution of vacancies in two-dimensional surface.

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Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

Cited by 2 publications

References 18 publications

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

Fast Diffusion of Metastable Vacancies in Surface of Excited Si Crystals

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