Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

Janavičius, A.J.; Storasta, J.; Purlys, R.; Mekys, Algirdas; Balakauskas, S.; Norgėla, Žilvinas

doi:10.12693/aphyspola.112.55

Cited by 7 publications

(8 citation statements)

References 21 publications

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“…We arrived at the same conclusion for the Si sample after measurements of abrupt changes of conductivity and the Hall mobility after irradiation [20]. Here we had a complicated decrease in conductivity, which is caused by time dependence of the structure of metastable defects in silicon [9].…”

Section: Model Calculations and Discussionmentioning

confidence: 81%

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

et al. 2008

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We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated by soft X-rays was obtained experimentally. In this work, we presented experimentally obtained diffusion coefficients of singly and doubly negatively charged long-lived excited vacancies. These high concentration charged metastable vacancies (about 10 13 cm −3 ) at room temperature can very fast diffuse changing electrical conductivity and the Hall mobility of carriers. We measured the superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, which were not affected by X-rays. In this paper, we presented the obtained superdiffusion profiles of boron and phosphorus in crystalline silicon measured with secondary-ion mass spectrometer.

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Section: Model Calculations and Discussionmentioning

confidence: 81%

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

et al. 2008

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“…A typical scenario of generating a glider on a phyllosilicate lattice would be the one detailed in [13]. A locally irradiation of the lattice with 1-3 MeV electrons, gamma rays, or fast neutrons [13] would move silicon atoms into metastable interstitial states. Thus a negatively charged travelling vacancy is formed.…”

Section: Discussionmentioning

confidence: 99%

Game of life on phyllosilicates: Gliders, oscillators and still life

Adamatzky

2013

Physics Letters A

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A phyllosilicate is a sheet of silicate tetrahedra bound by basal oxygens. A phyllosilicate automaton is a regular network of finite state machines -silicon nodes and oxygen nodes -which mimics structure of the phyllosilicate. A node takes states 0 and 1. Each node updates its state in discrete time depending on a sum of states of its three (silicon) or six (oxygen) neighbours. Phyllosilicate automata exhibit localizations attributed to Conway's Game of Life: gliders, oscillators, still lifes, and a glider gun. Configurations and behaviour of typical localizations, and interactions between the localizations are illustrated.

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“…The stimulated Auger effect by soft X-rays, instead irradiation with gamma rays, can be used as the alternative tool for generation of point defects [3], metastable vacancies [4][5][6][7] and induction of chemical reactions. Irradiation with soft X-rays changes conductivity [4,6,7], creates resonances of charge carrier scattering effect [4,7], and generates resonance phenomena in lattice with energy transitions [6,7].…”

Section: Introductionmentioning

confidence: 99%

Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

et al. 2009

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In this paper we applied the soft-X-ray radiation for generation of point defects, vacancies, and chemical reactions in quartz (SiO 2 ), taking into account our earlier made similar experiments with crystal silicon and importance of quartz for applications in many fields. In this case only radiative Auger's effects with electrons and electric dipole of atoms transitions can generate metastable vacancies, point defects, and induce chemical reactions. Usually, for point defects generation doses of gamma rays are used. We measured values of the Bragg reflections of X-rays and calculated mean square deviations of atoms in crystal lattice for defining the dynamics of irradiated point defects. We accomplished infrared measurements for establishing of generated chemical reactions, and conductivity measurements were also done.

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Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

Cited by 7 publications

References 21 publications

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

Game of life on phyllosilicates: Gliders, oscillators and still life

Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

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