Data on thermally stimulated current (TSC), Hall mobility, photocurrent, and photovoltage measurements associated with EL2 transition to the metastable state in semi‐insulating (si) GaAs are presented. The metastable behavior of EL2 enables the separate observation of electron and hole traps by thermally stimulated methods. Thermal quenching of TSC, associated with the hole trap H2 = Ev + 0.4 eV, is observed for the first time. The influence of inhomogeneous distribution of defects is discussed.
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