Influence of the EL2 → EL2* transition on photoconductivity and thermally stimulated processes in semi-insulating GaAs

Kiliulis, R.; Rinkevičius, Vytautas; Storasta, J.

doi:10.1002/pssa.2211270216

Cited by 18 publications

(16 citation statements)

References 14 publications

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“…4b) are also very sensitive to defect concentrations (see Table 1). In general, concentrations n, N A , and N g decrease during the photoquenching process as has been deduced from experimental results [6].…”

Section: Resultsmentioning

confidence: 96%

“…The existence of persistent electrons in n-type state can be hardly explained without assuming spatial separation of free carriers by potential fluctuations. 6. The model gives that in the case of enhancement of PC in p-type state, the nonequilibrium free hole concentration is much smaller than the defect concentration.…”

Section: Discussionmentioning

confidence: 98%

“…On the other hand, the diversity of photoquenching results very often is attributed to the properties of the "EL2 family" [7 to 101. Our previous work showed a complicated behaviour of photoquenching transients of photoconductivity and Hall mobility (with possible conductivity type inversion) and considerable decrease of electron concentration in electron and hole traps during EL2 + EL2* transformation [6]. Charge transfer induced by the transformation has been observed in LVM absorption [ll, 121 and photo-EPR [13, 141 experiments.…”

Section: Introductionmentioning

confidence: 98%

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Model of Charge Transfer Induced by EL2→EL2* Transformation in Semi‐Insulating GaAs

Kiliulis

Kažukauskas

1993

Physica Status Solidi (b)

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A numerical simulation of EL2 level transition to its metastable state in semi-insulating (si) GaAs is performed solving the system of equations describing the charge transfer between EL2 and two other levels, namely a donor and an acceptor. The metastable EL2* state is involved as electrically and optically inactive. The time dependence of the changes of photoconductivity, Hall mobility, and also of electron population in EL2, donor, and acceptor levels is obtained for a different initial compensation ratio of si GaAs samples. It is shown that the photoquenching process consisting of up to three exponential parts is ruled by the state changes of one EL2 level and is very sensitive to the defect concentrations involved.Eine numerische Simulation des uberganges vom EL2-Niveau in seinen metastabilen Zustand im halbisolierenden (si) GaAs wird durch die Losung eines Gleichungssystems, das den Ladungstransfer zwischen EL2 und zwei zusatzlichen Niveaus, einem Donator und einem Akzeptorniveau beschreibt, durchgefiihrt. Der metastabile Zustand EL2* wird als elektrisch und optisch inaktiv betrachtet. Die Zeitabhangigkeit der Photoleitfahigkeit, der Hall-Beweglichkeit sowie der Elektronenbesetzung der EL2-, Donator-und Akzeptorniveaus wird fur verschiedene Kompensationsverhaltnisse des si GaAs erhalten. Es wird gezeigt, daB der Photoloschungsprozel, der aus bis zu drei exponentiellen Anteilen besteht, durch die Zustandsanderungen des EL2-Niveaus bestimmt wird und sehr empfindlich auf die Defektkonzentration reagiert.

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Section: Resultsmentioning

confidence: 96%

Section: Discussionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 98%

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Model of Charge Transfer Induced by EL2→EL2* Transformation in Semi‐Insulating GaAs

Kiliulis

Kažukauskas

1993

Physica Status Solidi (b)

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“…The appearance of barriers with asymmetry in the opposite direction when a large concentration of holes is created has been proposed in Ref. 12 to account for the polarity inversion of the photovoltage in undoped Si GaAs.…”

Section: Resultsmentioning

confidence: 97%

“…12. The time evolution of this photovoltage was studied but its spectral dependence is not measured 9…”

Section: Resultsmentioning

confidence: 99%

Spectral Behavior of Zero‐Bias Photocurrent at Low Temperature in Bulk Semi‐Insulating GaAs : Cr

Germanova

Ivanov

Zheleva

et al. 1994

J. Electrochem. Soc.

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A zero-bias photocurrent (ZBPC) is observed in Cr-doped semi-insulating (St) GaAs bulk crystals under illumination in the subbandgap energy range at low temperatures. It is ascribed to photocarriers driven by local electric fields associated with internal potential barriers due to random defect density fluctuations in the sample. An interpretation of the ZBPC spectral behavior is proposed based on comparison with the conventional photocurrent spectrum. To our knowledge this is the first attempt to investigate the spectral behavior of the ZBPC in compensated semiconductors. The effect of the optical stimulated polarity changes of the ZBPC could be considered as an alternative approach to the analysis of phototransport properties of Si semiconductor materials.

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The Influence of High-Temperature Annealing on the Photoelectric Properties of Semi-Insulating GaAs

Petrauskas

Juodkazis

Netiksis

et al. 1993

Phys. Stat. Sol. (a)

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Influence of the EL2 → EL2* transition on photoconductivity and thermally stimulated processes in semi-insulating GaAs

Cited by 18 publications

References 14 publications

Model of Charge Transfer Induced by EL2→EL2* Transformation in Semi‐Insulating GaAs

Model of Charge Transfer Induced by EL2→EL2* Transformation in Semi‐Insulating GaAs

Spectral Behavior of Zero‐Bias Photocurrent at Low Temperature in Bulk Semi‐Insulating GaAs : Cr

The Influence of High-Temperature Annealing on the Photoelectric Properties of Semi-Insulating GaAs

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