Lattice and grain-boundary diffusion of As in Ni2Si

Abstract

The effect of solute segregation on strain localization in nanocrystalline thin films: Dislocation glide vs. grainboundary mediated plasticity Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111) J. Appl. Phys. 113, 053511 (2013); 10.1063/1.4790597 Effect of Cu and Ag solute segregation on βSn grain boundary diffusivityThe diffusion coefficient of As in 260 nm thick polycrystalline Ni 2 Si layers has been measured both in grains and in grain boundaries ͑GBs͒. As was implanted in Ni 2 Si layers prepared via the reaction between a Si layer and a Ni layer deposited by magnetron sputtering on a ͑100͒ Si substrate covered with a SiO 2 film. The As concentration profiles in the samples were measured using secondary ion mass spectroscopy before and after annealing ͑400-700°C͒. The diffusion coefficients in the grains and the GBs have been determined using two-dimensional finite element simulations based on the Fisher model geometry. For short time annealing ͑1 h͒ and temperatures lower than 600°C, lattice diffusion has not been observed. However, GB diffusion was evidenced for temperatures as low as 400°C. For higher thermal budgets, As diffuses simultaneously in the volume of the grains and in the GBs. Lattice diffusion is characterized by a pre-exponential factor D 0v ϳ 1.5 ϫ 10 −1 cm 2 s −1 and an activation energy Q v ϳ 2.72Ϯ 0.10 eV. In the case of GB diffusion, the triple product of the As segregation coefficient ͑s͒, the GB width ͑␦͒, and the diffusion coefficient ͑D GB ͒ is found to be s␦D GB = 9.0ϫ 10 −3 exp͑−3.07Ϯ 0.15 eV/ kT͒ cm 3 s −1 . Various types of simulations were used in order to support the discussion of the results.

Dopant diffusivity and solubility in nickel silicides

“…This can be explained by fast diffusion exclusively in GBs (C kinetic regime) [12,17]. Indeed, it is common that high impurity concentration in GBs cannot be detected by SIMS due to the low GB density.…”

“…In a previous work, similar profile shapes could be explained in details by moderate diffusion in the volume and fast diffusion along interfaces and grain boundaries. 2D simulations based on Fick's equation could fit several similar profiles of As implanted in Ni 2 Si and diffusion coefficients were measured [17,18]. No indication of precipitation is observed, and the dopant is mobile at any observed concentration in the volume.…”

Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials

“…24 Additional grain growth in the Ni 2 Si can be seen and the NiAs grains are absorbed into the silicide.…”

“…24 The result would be an excess of arsenic atoms at the GaAs/Si interface which can react with Ni to form NiAs. At 700…”

B diffusion in implanted Ni2Si and NiSi layers

“…17 for the description of sample fabrication and of silicide grain size stabilization procedures͒. Three following samples were produced: two samples were made for B diffusion studies either in Ni 2 Si or in NiSi, and one sample was made to observe B redistribution resulting from the sequential formation of Ni 2 Si and NiSi.…”