B diffusion in implanted Ni2Si and NiSi layers

Blum, Ivan; Portavoce, A.; Chow, Lee; Mangelinck, Dominique; Hoummada, K.; Tellouche, G.; Carron, V.

doi:10.1063/1.3303988

Cited by 9 publications

(5 citation statements)

References 26 publications

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“…It diffuses only at 550°C, when the concentration becomes homogeneous in NiSi. Additional profiles (not shown here) show that the B concentration is already homogeneous after annealing the same sample at 500°C for only 1h [11]. This result is different fromwhat was observed for the diffusion of B that was implanted in preformed NiSi, where diffusion was observed at a temperature as low as 400°C.…”

Section: Diffusion In Materials -Dimat 2011contrasting

confidence: 67%

Diffusion and Redistribution of Boron in Nickel Silicides

Blum

Portavoce

Chow

et al. 2012

DDF

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The Diffusion and Solubility of B Implanted in δ-Ni2Si and Nisi Layers Is Studied by SIMS. it Is Observed that both Diffusion and Solubility Are Higher in δ-Ni2Si than Nisi. the Redistribution of B during Ni Silicidation Is Also Studied. the SIMS Profiles Show the Presence of Concentration Step in the Middle of the Final Nisi Layer. this Profile Shape Is Explained in Light of the Results Obtained in Preformed Silicides. the Proposed Model Is Supported by Redistribution Simulations that Can Reproduce the Main Features of the Profile.

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Section: Diffusion In Materials -Dimat 2011contrasting

confidence: 67%

Diffusion and Redistribution of Boron in Nickel Silicides

Blum

Portavoce

Chow

et al. 2012

DDF

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“…The diffusion of atoms may vary significantly from one phase to another since the atomic diffusion mechanisms can differ from phase to phase. For example, the diffusion coefficients of As 35 and B 36,37 were shown to exhibit large variations in Ni 2 Si and NiSi in grains, as well as in GBs. In addition, stress effects on atomic diffusion 30,38-41 were not taken into account in our simulations.…”

Section: E Comparison With Experimental Resultsmentioning

confidence: 99%

Theoretical investigation of the influence of reaction and diffusion kinetics upon thin-film reactive diffusion

Portavoce

Tréglia

2012

Phys. Rev. B

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Atomistic kinetic Monte Carlo simulations, considering the thermodynamic model of the nonregular solid solution on a rigid fcc lattice and using the first-neighbor atomic pair interaction Ising model, were performed to investigate the influence of reaction and diffusion kinetics on thin-film reactive diffusion with a semi-infinite substrate. The simulations show that compound bulk energies have no effect on the phase sequence of appearance during sequential phase formation. However, a diffusion asymmetry between the elements composing the solid solution has a strong effect on sequential phase formation. Diffusion asymmetry increases the critical thickness of the simultaneous-to-sequential phase formation transition, modifies the phase formation sequence, and controls which phase is the first to form. Asymmetrical diffusion can promote transient phase formation and can prevent some phases of the bulk phase diagram from forming. In addition, it influences the thicknesses of phases and their lifetimes during thin-film reactive diffusion. Consequently, the control of atom diffusion during reactive diffusion, for example, thanks to the controlled introduction of impurities, should allow the phase formation sequence of a given binary system to be modified.

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“…However a recent study 29 has shown that the solubility of B in Ni 2 Si is larger than 10 21 at/ cm 3 ͑i.e., about 2 at. Two peaks appear below the Ni film and a large amount of boron is observed both in NiSi 2 and NiSi.…”

Section: Resultsmentioning

confidence: 93%

Atomic-scale boron redistribution during reactive diffusion in Ni–Si

Cojocaru‐Mirédin

Mangelinck

Blavette

2010

Journal of Applied Physics

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The redistribution of boron during the formation of the Ni silicides was investigated using atom probe tomography and transmission electron microscopy. A 7 nm amorphous intermixed region was found after deposition of a 30 nm thick Ni film at room temperature. The formation of this Ni-Si layer was found to have almost no influence on the boron implantation profile. After heating at 290°C for 1 h, three types of silicides ͑Ni 2 Si, NiSi, and NiSi 2 ͒ were identified below a thin remaining film of Ni ͑8 nm͒. The unexpected presence of the silicon-rich NiSi 2 phase at this temperature may be caused by the presence of a thin silicon oxide ͑SiO 2 ͒ observed at the Ni/ Ni 2 Si interface that may act as a diffusion barrier. The average boron profile in NiSi 2 and NiSi silicides is similar to the profile in the silicon substrate before reaction. A segregation of boron at several interfaces was detected. Small boron clusters ͑1.5 at. %͒ were found in NiSi, NiSi 2 , and Si phases but not in Ni 2 Si. After a 1 min heat treatment at 450°C, the NiSi phase is the only silicide present. Boron clusters with a platelet shape and a concentration of 3 to 5 at. % of boron were found in both NiSi and Si. The presence of boron in the Ni silicide and its precipitation in the form of tiny clusters is likely to affect the electrical properties of the contacts.

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B diffusion in implanted Ni2Si and NiSi layers

Cited by 9 publications

References 26 publications

Diffusion and Redistribution of Boron in Nickel Silicides

Diffusion and Redistribution of Boron in Nickel Silicides

Theoretical investigation of the influence of reaction and diffusion kinetics upon thin-film reactive diffusion

Atomic-scale boron redistribution during reactive diffusion in Ni–Si

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