Dopant diffusivity and solubility in nickel silicides

Blum, Ivan; Portavoce, A.; Hoummada, K.; Tellouche, G.; Chow, Lee; Mangelinck, Dominique; Carron, V.

doi:10.1002/pssc.201000283

Cited by 4 publications

(2 citation statements)

References 19 publications

(24 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The higher SBH of DS-NiSi/n-Si was attributed to the electric dipoles introduced by the B DS at the NiSi/n-Si interface. , During the DS process, the B dopants were first implanted into the as-formed NiSi film. Upon subsequent drive-in annealing, because of the limited solubility of B in NiSi, soluble B dopants could not be incorporated into the NiSi film and would instead tend to diffuse out of the NiSi film and finally accumulate at the NiSi/n-Si interface, where the B dopants partially substituted for the Si atoms on the Si lattice in close vicinity to the NiSi/n-Si interface. , Secondary ion-mass spectroscopy (SIMS) analysis was performed to profile the depth distribution of boron dopants in NiSi/n-Si after DS. As shown in Figure , the boron dopants accumulated at the NiSi/n-Si interface after DS.…”

Section: Resultsmentioning

confidence: 99%

Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes

She

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Silicon (Si)-based Schottky junction photoelectrodes have attracted considerable attention for photoelectrochemical (PEC) water splitting in recent years. To realize highly efficient Si-based Schottky junction photoelectrodes, the critical challenge is to enable the photoelectrodes to not only have a high Schottky barrier height (SBH), by which a high photovoltage can be obtained, but also ensure an efficient charge transport. Here, we propose and demonstrate a strategy to fabricate a high-performance NiSi/n-Si Schottky junction photoanode by metal silicidation in conjunction with dopant segregation (DS). The metal silicidation produces photoanodes with a high-quality NiSi/Si interface without a disordered SiO2 layer, which ensures highly efficient charge transport, and thus a high saturated photocurrent density of 33 mA cm–2 was attained for the photoanode. The subsequent DS gives the photoanodes a high SBH of 0.94 eV through the introduction of electric dipoles at the NiSi/n-Si interface. As a result, a high photovoltage and favorable onset potential of 1.03 V vs RHE was achieved. In addition, the strong alkali corrosion resistance of NiSi also endows the photoanode with a high stability during PEC operation in 1 M KOH. Our work provides a universal strategy to fabricate metal–silicide/Si Schottky junction photoelectrodes for high-performance PEC water splitting.

show abstract

Section: Resultsmentioning

confidence: 99%

Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes

She

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…It was reported that both As and B dopants have higher solubilities in Ni 2 Si than in NiSi. 41 During the drive-in anneals in the modified scheme, the soluble As or B dopants in Ni 2 Si have to be expelled out and pile up at the NiSi/Si interface. These two factors lead to the more pronounced As and B DS at the NiSi/Si interface in the modified scheme.…”

Section: Resultsmentioning

confidence: 99%

A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique

Duan

Wang

Luo

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this work, a proposed modified scheme to reduce the specific contact resistivity (ρc) of NiSi/Si contacts by means of dopant segregation (DS) technique is presented. In contrast to conventional scheme in which NiSi is formed at 500°C/30s followed by B or As implantation and subsequently drive-in anneals to induce DS at the NiSi/Si interface, this modified scheme consists of the following steps: (1) Deposited Ni films undergo a rapid thermal anneal (RTA1) at a low temperature 300°C/60 s to form Ni-rich silicide i.e. Ni2Si instead of NiSi followed by the removal of un-reacted Ni; (2) implant boron (B) or arsenic (As) into pre-formed Ni-rich silicide and perform RTA2 at 500–700°C/30 s to transform Ni-rich silicide to NiSi as well as to induce DS at the NiSi/Si interface. For NiSi/n- and p-Si contacts, the ρc values at 600°C drive-in anneal temperature is reduced from 6.5 × 10−9 Ω-cm2 and 1.3 × 10−7 Ω-cm2 using conventional scheme to 5.1 × 10−9 Ω-cm2 and 1.0 × 10−7 Ω-cm2 using modified scheme respectively, with the presence of As or B DS. Enhanced DS at the NiSi/Si interface accounts for improved ρc in the modified scheme. This proposed modified scheme can be also applied to reduce the ρc values in the state-of-the-art NiGe/Ge contacts.

show abstract