Lateral variations in self-assembled InGaAs quantum dot distributions

Precise Tuning of (YBa2Cu3O7‐δ)1‐x:(BaZrO3)x Thin Film Nanocomposite Structures

“…A vertical nanocolumnar structure of BZO in a YBCO matrix is observed for x < 0.4, consistent with the widely reported results on YBCO thin films with low molar ratio inclusion of BZO . The vertical nanocolumnar structure forms instead of random BZO nanoparticles because the strain fields around existing nanoparticles lead to a lower nucleation energy for new nanoparticles . A change from vertical columnar structure to a horizontal multilayered structure occurs at x > 0.4.…”

“…coatings for wear resistance and in smart materials . However, while considerable work has been undertaken over the last 20 years to understand self‐assembly of semiconductor quantum dots in thin films, including understanding of long range elastic interactions and strain effects, much less has been studied for oxide films . We now need to be able to dial in the precise structure so as to give novel functionalities by interaction or coupling between the constituents …”

Self‐Assembled Heteroepitaxial Oxide Nanocomposite Thin Film Structures: Designing Interface‐Induced Functionality in Electronic Materials

“…To consider whether there are conditions that can be chosen to promote such ordering, let us turn to the case of semiconductor quantum dot (QD) structures where there have been many studies dating back more than 20 years 16. Here, only partial ordering of structures can be produced although it is well established that long‐range elastic interactions are responsible 17. Arrays of self‐assembled semiconductor dots (nanoislands) of ∼20–50 nm size are readily achievable by growth of one semiconductor (S1) on a different, lattice‐mismatched semiconductor (S2) 18.…”

“…[16] Here, only partial ordering of structures can be produced although it is well established that longrange elastic interactions are responsible. [17] Arrays of selfassembled semiconductor dots (nanoislands) of $20-50 nm size are readily achievable by growth of one semiconductor (S1) on a different, lattice-mismatched semiconductor (S2). [18] Partial lateral ordering is achieved by introducing thin layers of S2 above the S1 dots, inducing nucleation of new S1 dots in the enhanced strain field regions in S2 above the buried S1 dots.…”

Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

“…However, as a direct consequence of the StranskieKrastanow (SK) growth mode, the optimal exploitation of these QDs are seriously limited by several parameters, such as low surface density [5], strain accumulation [6], size distribution [7]. Several attempts have been made to improve the QDs properties including the use of strain reducing layers [8,9], strain compensation [10], post growth intermixing [11], and surfactant [12].…”