Articles you may be interested in 1.55 μ m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer Appl. Phys. Lett. 92, 111906 (2008); 10.1063/1.2898895Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP
Experimental island count histograms as a function of SAQD volume have been evaluated using an established model. The experimental data was obtained for 51 mm wafers grown by MOCVD and analyzed over the center 26 × 26 mm square of the wafer with AFM. More than one distribution is required for all conditions investigated to obtain adequate representations of the experimental data. Consistent parameters are obtained for samples grown with a variable InAs thickness. Higher growth temperatures results in material being converted into relaxed islands. Extended annealing without AsH3 eliminates small islands, suggesting that they are not a stable distribution.
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