Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector

Yu, Xin; Zhang, Shengli; Zeng, Haibo; Wang, Qi Jie

doi:10.1016/j.nanoen.2016.04.030

Cited by 164 publications

(145 citation statements)

References 46 publications

(29 reference statements)

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“…62,63 Similarly, covalent diazonium functionalization of phosphorene suppresses its chemical degradation and significantly improves its stability. 64 Other studies have found that the addition of Cu adatoms 65 or chemical doping with benzyl viologen 66 can be used as an effective electron doping strategy to obtain n-type conductivity. It has also been found that doping, even with non-magnetic atoms such as oxygen, sulfur, or selenium, can induce magnetism in phosphorene.…”

Section: Determination Of the Number Of Layersmentioning

confidence: 99%

“…91 Experimentaly, first in-plane p-p junctions have recently been fabricated using chemical doping and its considerable performance has been shown. 66 Due to the lone electron pair on each phosphorus atom in phosphorene, it is also a very promising material for gas sensing applications. 92 Organic molecules such as tetracyano-pquinodimethane (TCNQ) have been predicted to act as acceptors once absorbed onto phosphorene.…”

Section: Applications Of Phosphorene Electronic Devices and Sensorsmentioning

confidence: 99%

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Recent advances in synthesis, properties, and applications of phosphorene

et al. 2017

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Since its first fabrication by exfoliation in 2014, phosphorene has been the focus of rapidly expanding research activities. The number of phosphorene publications has been increasing at a rate exceeding that of other two-dimensional materials. This tremendous level of excitement arises from the unique properties of phosphorene, including its puckered layer structure. With its widely tunable band gap, strong in-plane anisotropy, and high carrier mobility, phosphorene is at the center of numerous fundamental studies and applications spanning from electronic, optoelectronic, and spintronic devices to sensors, actuators, and thermoelectrics to energy conversion, and storage devices. Here, we review the most significant recent studies in the field of phosphorene research and technology. Our focus is on the synthesis and layer number determination, anisotropic properties, tuning of the band gap and related properties, strain engineering, and applications in electronics, thermoelectrics, and energy storage. The current needs and likely future research directions for phosphorene are also discussed. , there has been a quest for new two-dimensional (2D) materials aimed at fully exploring new fundamental phenomena stemming from quantum confinement and size effects. This quest has spurred new areas of research with rapid growth from both theoretical and experimental fronts aimed at technological advancements. Among recently discovered 2D materials, phosphorene is one of the most intriguing due to its exotic properties and numerous foreseeable applications.2 This review discusses recent advances in phosphorene research with special emphasis on: (i) fabrication and techniques for rapid identification of the number of layers; (ii) anisotropic behavior; (iii) band gap and property tuning; (iv) strain engineering and mechanical properties; (v) devices and applications; and (vi) future directions.2D materials composed of a single-atom-thick or a singlepolyhedral-thick layer can be grouped into diverse categories.

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Section: Determination Of the Number Of Layersmentioning

confidence: 99%

Section: Applications Of Phosphorene Electronic Devices and Sensorsmentioning

confidence: 99%

Recent advances in synthesis, properties, and applications of phosphorene

et al. 2017

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“…In addition, graphene p-n junctions [82][83][84], TMD p-n junctions [85] and BP p-n junctions [86,87] have been constructed and exhibited high responsivity, due to effective separations of photo-generated electron/hole pairs by internal electric fields.…”

Section: Hybrid Semiconductor Materials With P-n Junctionsmentioning

confidence: 99%

“…For example, a heterojunction p-n diode based on phosphorene/monolayer MoS2 has been fabricated by van der Waals forces [81], which exhibits excellent current-rectifying characteristics and high Ilight/Idark ratio, up to 3 × 10 3 . In addition, graphene p-n junctions [82][83][84], TMD p-n junctions [85] and BP p-n junctions [86,87] have been constructed and exhibited high responsivity, due to effective separations of photo-generated electron/hole pairs by internal electric fields.…”

Section: Hybrid Semiconductor Materials With P-n Junctionsmentioning

confidence: 99%

Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors

Cui

Yang

et al. 2017

Crystals

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Photodetectors based on two-dimensional (2D) nanostructures have led to a high optical response, and a long photocarrier lifetime because of spatial confinement effects. Since the discovery of graphene, many different 2D semiconductors have been developed and utilized in the ultrafast and ultrasensitive detection of light in the ultraviolet, visible, infrared and terahertz frequency ranges. This review presents a comprehensive summary of recent breakthroughs in constructing high-performance photodetectors based on 2D materials. First, we give a general overview of 2D photodetectors based on various single-component materials and their operating wavelength (ultraviolet to terahertz regime). Then, we summarize the design and controllable synthesis of heterostructure material systems to promote device photoresponse. Subsequently, special emphasis is put on the accepted methods in rational engineering of device architectures toward the photoresponse improvements. Finally, we conclude with our personal viewpoints on the challenges and promising future directions in this research field.

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“…2D lateral homojunctions can be achieved by selective chemical doping as well, as in few-layer MoS 2 [7] and BP cases. [17,18] In addition to homojunctions, heterojunctions have recently been under intense study to extend further the frontiers of 2D materials for electronic and optoelectronics. Particularly, by vertically stacking together flakes of different 2D materials, the so-called van der Waals heterojunction is formed which gathered extensive attention by offering a vast number of candidate structures for high-performance optoelectronic applications.…”

mentioning

confidence: 99%

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

Wang

Huang

Tan

et al. 2017

Adv Elect Materials

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complicated split-gates structure and suffer from nonabrupt junction interface due to the divergence of static electric field, limiting their practical applications. 2D lateral homojunctions can be achieved by selective chemical doping as well, as in few-layer MoS 2 [7] and BP cases. [17,18] In addition to homojunctions, heterojunctions have recently been under intense study to extend further the frontiers of 2D materials for electronic and optoelectronics. Particularly, by vertically stacking together flakes of different 2D materials, the so-called van der Waals heterojunction is formed which gathered extensive attention by offering a vast number of candidate structures for high-performance optoelectronic applications. [3,8,11,15,19,20] Nevertheless, the construction of this structure usually requires a dry/wet transfer technique that complicates the fabrication process. [21] Besides, it also tends to suffer from contaminants and bubbles introduced during the transfer, resulting in unwanted defects at the interface. [11] In contrast to vertical heterojunctions, lateral heterojunctions composed of p-and n-type TMDCs semiconductors are also explored where disparate materials can be grown along the edges of the previously grown flakes in the epitaxy process. [22][23][24] Yet, this strategy is severely challenged by the control of large-area uniform growth and the high yield of clean junction interface. As well known, an inherent nature of 2D materials is their thickness-(or layer-number-) dependent bandgaps. [25] Such dependence implies energy bands discontinuities at the interface of different-layer-number films, forming spontaneously a lateral heterojunction distinct from the conventional ones. [26][27][28][29] The study on this kind of structure is likely to expand the realms of 2D materials diverse applications but few works have been done. [26,28,29] Recently, few-layer black phosphorus has been rediscovered as a novel promising 2D semiconductor for nextgeneration nanoelectronic and optoelectronic devices due to its direct bandgap, ambipolar conduction, anisotropic nature, and a high field-effect hole mobility. [30][31][32][33] Especially, BP has a largely adjustable direct thickness-dependent bandgap ranging from 2.0 eV for monolayer to 0.3 eV for its bulk form, [34] which bridges the bandgap space between gapless graphene and large gap TMDCs by covering the mid-infrared to near-infrared wavelengths, leading to new electronic and optoelectronic devices. [33] In this work, we experimentally demonstrate a gate-tunable all-BP lateral heterojunction diode with thickness-induced bandgap difference for high-performance photovoltaic application, Recently, both lateral and vertical p-n junctions have been realized in 2D materials using various strategies, with a number of works on exploring the potential of lateral heterojunctions resulting from thickness-modulated bandgaps at the interface. Here, electrically tunable all-black-phosphorus (BP) lateral heterojunction diodes, without the need of split-gating or sele...

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Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector

Cited by 164 publications

References 46 publications

Recent advances in synthesis, properties, and applications of phosphorene

Recent advances in synthesis, properties, and applications of phosphorene

Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

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