Neuromorphic computing, which emulates the biological neural systems could overcome the high‐power consumption issue of conventional von‐Neumann computing. State‐of‐the‐art artificial synapses made of two‐terminal memristors, however, show variability in filament formation and limited capacity due to their inherent single presynaptic input design. Here, a memtransistor‐based artificial synapse is realized by integrating a memristor and selector transistor into a multiterminal device using monolayer polycrys‐talline‐MoS2 grown by a scalable chemical vapor deposition (CVD) process. Notably, the memtransistor offers both drain‐ and gate‐tunable nonvolatile memory functions, which efficiently emulates the long‐term potentiation/depression, spike‐amplitude, and spike‐timing‐dependent plasticity of biological synapses. Moreover, the gate tunability function that is not achievable in two‐terminal memristors, enables significant bipolar resistive states switching up to four orders‐of‐magnitude and high cycling endurance. First‐principles calculations reveal a new resistive switching mechanism driven by the diffusion of double sulfur vacancy perpendicular to the MoS2 grain boundary, leading to a conducting switching path without the need for a filament forming process. The seamless integration of multiterminal memtransistors may offer another degree‐of‐freedom to tune the synaptic plasticity by a third gate terminal for enabling complex neuromorphic learning.

and intelligent applications including personalized feedback therapy, fast speech, and visual recognition. [1][2][3][4][5] In particular in the non-conventional space of smart applications requiring conformal attachment on non-flat surfaces such as on-body wearables, the notion of system on plastics (SOP) incorporating neuromorphic computing provides a potential solution. [1,2] To build such a flexible neuromorphic system, the fabrication of memristors equipped with synaptic functions is a key step to forming the artificial neural network. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] However, current memristor manufacturing technologies such as chemical vapor deposition (CVD), [7,8,[11][12][13] spin-coating, [14,15] or entire transfer [16] impose enormous challenges on flexible substrates as they suffer from high temperature, low yield and complex sacrificial layer removal. Efforts in finding low temperature fabrication technique and robust resistive switching (RS) material are essential to equip the SOP with the data storage and processing capability demanded by target applications. The printing technique-a forefront 3D monolithic integration approach-is suitable for high-volume, low-temperature manufacturing on non-conformal surfaces. [22][23][24][25][26][27][28] The printing technique is shown to offer more freedom in the design of Realization of memristors capable of storing and processing data on flexible substrates is a key enabling technology toward "system-on-plastics". Recent advancements in printing techniques show enormous potential to overcome the major challenges of the current manufacturing processes that require high temperature and planar topography, which may radically change the system integration approach on flexible substrates. However, fully printed memristors are yet to be successfully demonstrated due to the lack of a robust printable switching medium and a reliable printing process. An aerosol-jet-printed Ag/MoS 2 /Ag memristor is realized in a cross-bar structure by developing a scalable and low temperature printing technique utilizing a functional molybdenum disulfide (MoS 2 ) ink platform. The fully printed devices exhibit an ultra-low switching voltage (0.18 V), a high switching ratio (10 7 ), a wide range of tuneable resistance states (10-10 10 Ω) for multi-bit data storage, and a low standby power consumption of 1 fW and a switching energy of 4.5 fJ per transition set. Moreover, the MoS 2 memristor exhibits both volatile and non-volatile resistive switching behavior by controlling the current compliance levels, which efficiently mimic the short-term and longterm plasticity of biological synapses, demonstrating its potential to enable energy-efficient artificial neuromorphic computing.

Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈10 cm V s ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm V s at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment.

The discovery of the new class of 2D materials has stimulated extensive research interest for fundamental studies and applied technologies. Owing to their unique electronic and optical properties, which differ from their bulk counterparts and conventional optoelectronic materials, 2D materials at the atomic scale are very attractive for future photovoltaic devices. Over the past years, their great potential for photovoltaic applications has been widely investigated by creating a variety of specific device structures. Here, the recent progress made toward the exploitation of 2D materials for high‐performance photovoltaic applications is reviewed. By addressing both lateral and vertical configurations, the prospects offered by 2D materials for future generations of photovoltaic devices are elucidated. In addition, the challenges facing this rapidly progressing research field are discussed, and routes to commercially viable 2D‐material‐based photovoltaic devices are proposed.

Achieving excellent electrostatic control and immunity to short channel effects are the formidable challenges in ultrascaled devices. 3D device architectures, such as nanoribbon, have successfully mitigated these problems by achieving uniform top-and side-wall control of the channel. Here, by leveraging on the merits of 3D structure, high-mobility black phosphorus nanoribbon fieldeffect transistors (BPNR-FET) are demonstrated and the anisotropic transport properties are systematically investigated. A simple top-down reactive ion etching method is used to realize both armchair-and zigzag-oriented nanoribbons with various widths down to 60 nm. The mobility of BPNR-FET is found to be width-and thickness-dependent, with the highest hole mobility of ≈862 cm 2 V −1 s −1 demonstrated in armchair-oriented device at room temperature by combining high-κ gate dielectric and hydrogen treatment to reduce sidewall scattering. Furthermore, hydrogenation effectively passivates the nanoribbon dangling bonds, leading to hysteresis and contact resistance improvement. This work unravels the superior electrical performance underscore a conceptually new device based on BP nanoribbons, paving the way toward the development of nonplanar devices on 2D materials platform.simultaneously. This work demonstrates the potential of BPNR-FET as a high-performance p-type transistor in addition to the nanoribbon FET family which includes not only graphene and transition metal dichalcogenides (TMDs), but also group-IV, III-V compounds, and some heterojunctions.