High Mobility Anisotropic Black Phosphorus Nanoribbon Field‐Effect Transistor

Abstract

Achieving excellent electrostatic control and immunity to short channel effects are the formidable challenges in ultrascaled devices. 3D device architectures, such as nanoribbon, have successfully mitigated these problems by achieving uniform top-and side-wall control of the channel. Here, by leveraging on the merits of 3D structure, high-mobility black phosphorus nanoribbon fieldeffect transistors (BPNR-FET) are demonstrated and the anisotropic transport properties are systematically investigated. A simple top-down reactive ion etching method is used to realize both armchair-and zigzag-oriented nanoribbons with various widths down to 60 nm. The mobility of BPNR-FET is found to be width-and thickness-dependent, with the highest hole mobility of ≈862 cm 2 V −1 s −1 demonstrated in armchair-oriented device at room temperature by combining high-κ gate dielectric and hydrogen treatment to reduce sidewall scattering. Furthermore, hydrogenation effectively passivates the nanoribbon dangling bonds, leading to hysteresis and contact resistance improvement. This work unravels the superior electrical performance underscore a conceptually new device based on BP nanoribbons, paving the way toward the development of nonplanar devices on 2D materials platform.simultaneously. This work demonstrates the potential of BPNR-FET as a high-performance p-type transistor in addition to the nanoribbon FET family which includes not only graphene and transition metal dichalcogenides (TMDs), but also group-IV, III-V compounds, and some heterojunctions.

2D In2Ge2Te6 Crystals for High-Performance p-Channel Transistors

“…While BP exhibits better effective mass than In 2 Ge 2 Te 6 , the former offers terrible air stability, making it unsuitable for practical applications. 20,21 In addition, the stacking plots of constant energy contours from −0.60 eV to −0.35 eV indicate that the band fluctuations show evident 6-fold symmetry around the VBM at the Γ point, matching well with the theoretical simulation results of In 2 Ge 2 Te 6 being a hexagonal lattice structure (Figure 1g). We exfoliated 2D In 2 Ge 2 Te 6 nanosheets successfully, which is beneficial in investigating the structural and physical properties at the 2D atomic scale.…”

Wafer-scale black phosphorus film synthesis on arbitrary substrates enabled by van der Waals layer passivation

“…4c and Supplementary Fig. 30), which is comparable to the highest reported for BP-based transistors 7,9,10,12,[32][33][34][35][36] . The high mobility and reduced hysteresis are attributed to fewer interface charge-scattering centers and charge-trapping states, a consequence of the clean, wrinkle-free interface of the directly grown films (Supplementary Fig.…”

Complementary Black Phosphorus Nanoribbons Field-Effect Transistors and Circuits

“…This result exemplifies the effectiveness of hydrogen in passivating the dangling bonds and healing the defects induced by the dry etch, which is of essence to mitigate Fermi-level pinning effect and achieve BPNR transistor type-control as discussed in Section III-A. Moreover, we observed that the mobility, contact resistance, and SS are favorably improved due to better interface properties [10]. The hysteresis after hydrogen anneal is also examined at a different voltage sweep rate.…”