The phase transition, amorphization, and crystallization behaviors of the topological insulator bismuth selenide (Bi2Se3) were discovered by performing in situ high-pressure angle-dispersive x-ray diffraction experiments during an increasing, decreasing, and recycling pressure process. In the compression process, Bi2Se3 transforms from the original rhombohedral structure (phase I(A)) to a monoclinic structure (phase II) at about 10.4 GPa, and further to a body-centered tetragonal structure (phase III) at about 24.5 GPa. When releasing pressure to ambient conditions after the complete transformation from phase II to III, Bi2Se3 becomes an amorphous solid (AM). In the relaxation process from this amorphous state, Bi2Se3 starts crystallizing into an orthorhombic structure (phase I(B)) about five hours after releasing the pressure to ambient. A review of the pressure-induced phase transition behaviors of A2B3-type materials composed from the V and VI group elements is presented.
A new type of disordered substitution alloy of Sb and Te at above 15.1 GPa was discovered by performing in situ high-pressure angle-dispersive X-ray diffraction experiments on antimony telluride (Sb(2)Te(3)), a topological insulator and thermoelectric material, at room temperature. In this disordered substitution alloy, Sb(2)Te(3) crystallizes into a monoclinic structure with the space group C2/m, which is different from the corresponding high-pressure phase of the similar isostructural compound Bi(2)Te(3). Above 19.8 GPa, Sb(2)Te(3) adopts a body-centered-cubic structure with the disordered atomic array in the crystal lattice. The in situ high-pressure experiments down to about 13 K show that Sb(2)Te(3) undergoes the same phase-transition sequence with increasing pressure at low temperature, with almost the same phase-transition pressures.
Indium selenide (In 2 Se 3 ) could be used as the phase-change random access memory device and thermoelectric material. The high-pressure investigations are important to the applications on In 2 Se 3 and other A 2 B 3 -type materials. In this study, we performed the in situ angle-dispersive X-ray diffraction and Raman spectra experiments and the first-principle calculations on In 2 Se 3 under high pressure, and observed a series of structure phase transitions from experiments and metallized phenomena from calculations. In 2 Se 3 transforms from the original rhombohedral structure (phase I) to a distorted monoclinic structure (phase II) and further to a Bi 2 Te 3 -type structure (phase III) at about 0.81 and 5.02 GPa, respectively. And then, phase III′ of In 2 Se 3 adopts a similar structure with phase III from about 20.6 GPa. At pressures above about 32.1 GPa, In 2 Se 3 starts to crystallize into a defective Th 3 P 4 -type structure (phase IV). According to the first-principle calculations, the structural transitions in the compression process induce that In 2 Se 3 transforms from an insulator in phase I, across a semimetal in phase II and III, to a novel metal in the body-centered cubic structure (phase IV). The pressure-induced structure and conducting evolution on In 2 Se 3 are helpful to understand the properties of other selenides upon compression.
Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi2Se3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi2Se3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculations favor the viewpoint that the I4/mmm phase Bi2Se3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi2Se3 from this work (two independent runs) are still Raman active up to ~35 GPa. It is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows different structural behavior than isocompounds Bi2Te3 and Sb2Te3.
The high-pressure angle-dispersive X-ray diffraction experiments on the iron-based superconductor Nd(O0.88F0.12)FeAs were performed up to 32.7 GPa at room temperature. An isostructural phase transition starts at approximately 10 GPa. When pressure is higher than 13.5 GPa, Nd(O0.88F0.12)FeAs completely transforms to a high-pressure phase, which remains the same tetragonal structure with a larger a-axis and smaller c-axis than those of the low-pressure phase. The ambient conditions isothermal bulk moduli B0 are derived as 102(2) and 245(9) GPa for the low-pressure phase and high-pressure phase, respectively. The structure analysis based on the Rietveld refinement methods shows the difference of pressure dependence of the Fe-As and Nd-(O, F) bonding distances, as well as As-Fe-As and Nd-(O, F)-Nd angles between the low-pressure phase and high-pressure phase.
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