Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors

Cui, Qiuhong; Yang, Yijun; Li, Junmeng; Teng, Feng; Wang, Xi

doi:10.3390/cryst7050149

Cited by 26 publications

(27 citation statements)

References 117 publications

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“…For example, Xie et al presented a comprehensive review on photodetectors based on 2D‐layered semiconductors in terms of photoconductors, phototransistors, and photodiodes, that were reported in the previous five years . Cui et al gave a general overview of 2D photodetectors based on single‐component semiconductors, heterojunctions, and device structure engineering, including the graphene–semiconductor–graphene structure, the top‐gated architecture, and designed plasmonic nanostructures . However, a systematic overview in terms of methods is necessary to comprehend the advantages of each method comprehensively and further to explore and extract the strategies for enhancement and optimization of 2D‐material‐based photodetectors, which could also be important for their future practical and commercial application.…”

Section: Introductionmentioning

confidence: 99%

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

et al. 2018

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Graphene and graphene‐like 2D layered materials such as black phosphorus, transition‐metal dichalcogenides, oxides, chalcogenides, and so forth have attracted tremendous attention due to their unique crystal structures, mechanical, and physical properties, as well as their variable bandgaps that range from 0 to 6 eV, which have offered their utilization in versatile devices. Using these materials as the active channel, many novel electrical and optoelectronic devices have been reported. Among the various important devices applications, photodetectors based on 2D materials have been extensively investigated with varied performance due to the different species and detection mechanisms. Here, the methods to improve the performance of 2D‐material‐based photodetectors are reviewed. There are five kinds of strategies regarding methods, including surface plasmon enhancement, charge‐transfer assistance, optical‐waveguide integration, graphene sandwiched structures, and heterostructures directly grown by CVD, which are developed and widely reported in recent years. For each method, the device design, performance, and mechanism are introduced and discussed systematically. Finally, a summary is provided to afford the principle to further enhance the performance of photodetectors based on 2D materials, with a perspective for their practical applications in the future.

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Section: Introductionmentioning

confidence: 99%

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

et al. 2018

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“…Owing to these characteristics, LD photodetectors based on atomically thin 2D materials (e.g., graphene, MoS 2 , WS 2 , etc. ), 1D semiconductor nanowires (e.g., ZnO, Si, GaN, SnO 2 , etc. ), and 0D QDs (such as the PbS QD layer, the HgTe QD layer, and the InAs QDs in quantum wells) are at the forefront of photodetector research for their competitive device performance in terms of higher responsivity, high photoconductive gain, and fast response speed.…”

Section: Introductionmentioning

confidence: 99%

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Huang

Luo

2018

Advanced Optical Materials

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to these characteristics, LD photodetectors based on atomically thin 2D materials (e.g., graphene, MoS 2 , WS 2 , etc.), [3][4][5][6][7] 1D semiconductor nanowires (e.g., ZnO, Si, GaN, SnO 2 , etc.), [8] and 0D QDs (such as the PbS QD layer, the HgTe QD layer, and the InAs QDs in quantum wells) [9][10][11][12] are at the forefront of photodetector research for their competitive device performance in terms of higher responsivity, high photoconductive gain, and fast response speed. While the downscaling of devices hastens the electrical signal due to the short length of the electron transport, the small volume of the LD photodetectors also suffers from low absorption of light, e.g., 2.3% for single-layer graphene. [13] Surface plasmon polariton (SPP) is light-excited collective oscillation of free electrons on an interface between a metal layer and a dielectric medium such as air. [14] Under the SPP mode, the electromagnetic energy of light excitation is converted to the energy of an electromagnetic wave on the interface that exhibits characteristics of both the photons and the electrons. Therefore, the SPP mode can confine incident light on the surface of the metal layer below the diffraction limit, and propagate along the surface. Owing to the confinement, the SPP electromagnetic field could be enhanced by up to 10 5 . [15] This provides a promising solution to the dilemma of LD photodetectors and therefore are widely used in thin-film plasmonic optoelectronic devices. [16] However, excitation of SPPs on the metal layers is conditional and normally entails a special excitation setup, such as gold film-coated prism, to meet momentum conservation requirements, and therefore its use in LD photodetectors is limited. In contrast, localized surface plasmons (LSPs) can be excited by direct illumination on metal nanostructures, such as metal nanoparticles (NPs). Compared to SPP, LSP is confined on the NP surface without propagation, and its enhancement depends on NP size and geometry. [17] Thus, well-developed fabrication methods of metal nanostructures have rendered LSPs a dominant technology for boosting the device performance of LD photodetectors in recent years. [18] As the photodetector materials change from bulk or thin film to the LD ones, plasmonic materials also evolve for optimized enhancement depending on the dimensions of the photo detectors of interests. Silver nanowires are deposited on a 2D MoS 2 as an SPP photodetector. [2] Gold NPs are deposited on 1D nanowire as an LSP-enhanced photodetector. [19] Perforated nanohole arrays are made on a gold film to directly excite Plasmonic nanostructures can achieve subdiffraction-limit light confinement with enhanced electric fields. By taking advantage of the light-confinement effect, various plasmonic photodetectors that combine low-dimensional (LD) semiconductor structures and plasmonic materials have recently demonstrated excellent plasmon-enhanced device performance and attracted significant research interest. In this review, the state-of-the-art progress in...

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“…The mid-infrared (MIR) spectral region is of great research interest because the practical realization of optoelectronic devices that operate in the 2-5 µm wavelength region would bring potential applications in a wide range of areas, including optical gas sensing, environmental monitoring, free-space optical communications, infrared countermeasures, and thermal imaging [1][2][3]. Research into MIR semiconductor devices has thus become a focus of research attention worldwide.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, GaSb materials in the forms of epitaxial layers, multi-element alloys, quantum wells, superlattices and low-dimensional nanostructures have been attracting considerable attention. Additionally, based on the GaSb materials described above, a variety of advanced optoelectronic devices, including laser diodes, detectors, and transistors, have been realized [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Further development of spectroscopic techniques will therefore be helpful in the design and improvement of the next generation of optoelectronic devices. Additionally, two-dimensional (2D) materials offer further promise for the development of a new range of fundamental optoelectronic materials owing to their high crystal quality features and rich photophysical properties that will provide new material options for next generation optoelectronic devices [2,[8][9][10]. Therefore, owing to the advantages of 2D materials, further research should be directed to the epitaxy and optical properties of GaSb materials.…”

Section: Introductionmentioning

confidence: 99%

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Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors

Cited by 26 publications

References 117 publications

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

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