Large-scale growth of In₂O₃nanowires and their optical properties

Abstract

Large-scale single-crystalline In2O3 nanowires were successfully synthesized by a simple physical evaporation method at 950 °C. The as-synthesized products, characterized by XRD, SEM and TEM, are pure, structurally uniform and single crystalline with typical diameters of 10–100 nm and lengths of up to a few hundreds of micrometres. Two strong and wide violet emission bands centred at 388 and 401 nm are observed in the room-temperature photoluminescence measurements and their mechanism is discussed.

Growth and luminescence of elongated In2O3 micro- and nanostructures in thermally treated InN

“…The blue-green emission has also been reported in different In 2 O 3 nanostructures 17,18,20,21 while the PL band peak in the range 3.1-3.2 eV has been observed in nanowires. 7,22 The CL spectra recorded in the samples treated with the second step annealing at 650°C are similar to that shown in Fig. 5 ͓spectrum ͑a͔͒, with a single broadband peak at about 1.9 eV.…”

“…The blue-green band has been attributed to oxygen vacancies 5,17,18,21 and the 3.1 eV to near band edge emission 22 and to defects generated during growth. 7 The CL results indicate that the samples treated with a second step at 600°C, contain a higher amount of defects related to oxygen vacancies than those treated at 650°C, which exhibit well formed structures.…”

“…[5][6][7] In the present work, In 2 O 3 elongated micro-and nanostructures have been grown by thermal treatment of compacted InN powder under argon flow. This method has been previously reported to lead to the growth of elongated nanostructures, of different semiconductor oxides [8][9][10][11] and of CdSe 12 on the surface of the sample so that neither catalyst nor a foreign substrate is used.…”

Three dimensional nanowire networks and complex nanostructures of indium oxide

“…There is an increasing interest in the synthesis and properties of one-dimensional In 2 O 3 structures, which have been grown by different thermal methods, involving deposition on a substrate [1][2][3][4][5][6] and the use of In or In 2 O 3 as starting materials. In the present work, elongated In 2 O 3 nanostructures have been grown under argon flow by thermal treatment of compacted InN powder, as reported in Ref.…”

Low‐Temperature Epitaxial Growth of Vertical In2O3 Nanowires on A‐Plane Sapphire with Hexagonal Cross‐Section

“…The lower growth temperature in this work would favor higher VS deposition rate, [20] leading to tapered nanowires with obvious slopes. Recently, many groups have reported photoluminescence (PL) emissions from In 2 O 3 nanowires: L. Dai et al observed a UV emission and a blue emission at 392 nm and 468 nm, respectively; [21] F. Zeng et al observed two UV emissions at 388 nm and 401 nm; [22] H. Cao et al observed a UV emission at 398 nm. [23] In our experiment, room-temperature PL spectra of the In 2 O 3 nanowires were taken in UV-visible using a He-Cd laser (325 nm) as the excitation source.…”