Growth and luminescence of elongated In2O3 micro- and nanostructures in thermally treated InN

et al. 2008

In-doped SnO 2 microtubes as well as Sn-doped In 2 O 3 ͑ITO͒ nano-and microislands have been grown by thermal treatment of compacted SnO 2 -In 2 O 3 powders under argon flow at 1350°C in a catalyst-free process. The SnO 2 tubes contain about 1 at. % of In, even when the In content in the starting mixture was as high as 52 at. %. However, the ITO nanoislands and nanopyramids, grown preferentially on the faces and edges of the tubes, present an In content up to six times higher than the tubes. Spatially resolved cathodoluminescence shows a higher emission from the Sn-rich structures, so that the In-rich ITO nanoislands show dark contrast in the CL images. CL spectra show that the main emission bands in both, Sn-rich and In-rich, structures, are related to oxygen deficiency. X-ray photoelectron spectroscopy shows differences between the tubes and the nanoislands in the O ͑1s͒ spectral region. In particular, a component at 531.9 eV of the O ͑1s͒ signal appears enhanced in the In-rich islands.

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal growth and structural and optical characterization of indium tin oxide nanopyramids, nanoislands, and tubes

Maestre

Cremades

et al. 2008

“…In the present work, elongated In 2 O 3 nanostructures have been grown under argon flow by thermal treatment of compacted InN powder, as reported in Ref. 7. During the annealing, InN decomposes by nitrogen loss, and the oxide is slowly formed by the reaction of indium with the atmosphere.…”

Section: Introductionmentioning

confidence: 99%

“…[8][9][10][11] As reported in Ref. 7, In 2 O 3 structures with different morphologies and sizes are obtained during the thermal treatment of InN. The objective of this work is to determine the experimental conditions to grow specific structures, such as wires, rods, or arrows, and to study the evolution of the structures during extended treatments in order to control the growth process.…”

Section: Introductionmentioning

confidence: 99%

Three dimensional nanowire networks and complex nanostructures of indium oxide

Măgdaş

Cremades

2006

Self Cite

Elongated In 2 O 3 micro-and nanostructures have been grown by two-step thermal treatments of compacted InN powder, at temperatures between 350 and 700°C. Different thermal treatments have been found to induce the growth of structures with different sizes and morphologies as wires, rods, or arrows. The experimental conditions leading to the different structures, as well as the evolution of the structures during the treatments, have been investigated. Some treatments lead to large scale formation of three dimensional networks of the mentioned structures. The mechanism of network formation is discussed. The structures have been characterized by cathodoluminescence, scanning electron microscopy, and x-ray diffraction.

“…A similar technique was used previously to grow elongated micro-and nanostructures of other functional oxides. [12][13][14][15][16][17][18] The samples have been characterized by x-ray diffraction ͑XRD͒, scanning electron microscopy ͑SEM͒, high-resolution transmission electron microscopy ͑HRTEM͒, and cathodoluminescence ͑CL͒ spectroscopy in the SEM.…”

Section: Introductionmentioning

confidence: 99%

Structural and cathodoluminescence assessment of V2O5 nanowires and nanotips grown by thermal deposition

Dı́az-Guerra

2007

V 2 O 5 nanostructures have been grown on 4H-SiC and Si substrates by a thermal deposition method without a catalyst. High aspect ratio nanowires with rectangular cross sections were grown on 4H-SiC. High-resolution transmission electron microscopy observations and cathodoluminescence ͑CL͒ spectroscopy measurements reveal the high crystal quality of the grown nanowires. Deposition on Si substrates leads to the growth of V 2 O 5 platelets or rod-shaped crystals ending in arrays of parallel sharp nanotips with apex radius in the 50 nm range. A CL emission band observed centered at about 1.70 eV in spectra from these nanostructures is tentatively attributed to defect centers involving oxygen vacancies.