Epitaxial growth of vertical In2O3 (111) nanowires with hexagonal cross‐section on a‐plane sapphire is reported. The figure showing the vertical wires is viewed at 45° from the substrate normal. These wires taper gradually towards the tops and they start to bend near the tips. Because of the low‐temperature growth, the wires possess a new hexagonal symmetry and a shortest photoluminescence wavelength among those that have been reported for In2O3 nanowires.
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